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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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2SC3835 Arkusz danych(PDF) 1 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SC3835 Arkusz danych(HTML) 1 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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1 / 3 page  Product Specification www.jmnic.com 1 Silicon NPN Power Transistor 2SC3835 DESCRIPTION ・Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC=3A ・Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) ・Good Linearity of hFE APPLICATIONS ・Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 7 A ICM Collector Current-Pulse 14 A IB Base Current-Continuous 3 A PC Collector Power Dissipation @ TC=25℃ 70 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
Podobny numer części - 2SC3835_15 |
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Podobny opis - 2SC3835_15 |
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