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2SD1589 Arkusz danych(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SD1589 Arkusz danych(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 3 page Product Specification www.jmnic.com JMnic Silicon Power Transistors 2SD1589 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A , IB=0 60 V VCEsat Collector-emitter saturation voltage IC=3A IB=3mA 1.5 V VBEsat Emitter-base saturation voltage IC=3A IB=3mA 2.0 V ICBO Collector cut-off current VCB=100V IE=0 1 μA hFE-1 DC current gain IC=3A ; VCE=2V 2000 15000 hFE-2 DC current gain IC=5A ; VCE=2V 500 Switching times ton Turn-on time 1.0 μs ts Storage time 3.5 μs tf Fall time IC=3A ;IB1=3mA IB2=-3mA; VCC≈50V RL=16.7Ω 1.2 μs hFE Classifications R O Y 2000-5000 3000-7000 5000-15000 |
Podobny numer części - 2SD1589_15 |
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Podobny opis - 2SD1589_15 |
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