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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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BF998WR Arkusz danych(PDF) 4 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF998WR Arkusz danych(HTML) 4 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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4 / 12 page  1997 Sep 05 4 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF998WR THERMAL CHARACTERISTICS Notes 1. Device mounted on a printed-circuit board. 2. Ts is the temperature at the soldering point of the source lead. STATIC CHARACTERISTICS Tj =25 °C; unless otherwise specified. DYNAMIC CHARACTERISTICS Common source; Tamb =25 °C; VG2-S = 4 V; ID = 10 mA; VDS = 8 V; unless otherwise specified. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 350 K/W Rth j-s thermal resistance from junction to soldering point note 2; Ts =90 °C 200 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V(BR)G1-SS gate 1-source breakdown voltage VG2-S =VDS = 0; IG1-S = 10 mA 6 20 V V(BR)G2-SS gate 2-source breakdown voltage VG1-S =VDS = 0; IG2-S = 10 mA 6 20 V V(P)G1-S gate 1-source cut-off voltage VG2-S =4V; VDS =8V; ID =20 µA −−2.5 V V(P)G2-S gate 2-source cut-off voltage VG1-S = 0; VDS =8V; ID =20 µA −−2V IDSS drain-source current VG2-S =4V; VDS =8V; VG1-S =0 2 18 mA IG1-SS gate 1 cut-off current VG2-S =VDS = 0; VG1-S =5V − 50 nA IG2-SS gate 2 cut-off current VG1-S =VDS = 0; VG2-S =5V − 50 nA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT y fs forward transfer admittance pulsed; Tj =25 °C22 25 − mS Cig1-s input capacitance at gate 1 f = 1 MHz − 2.1 2.5 pF Cig2-s input capacitance at gate 2 f = 1 MHz − 1.2 − pF Cos drain-source capacitance f = 1 MHz − 1.05 − pF Crs reverse transfer capacitance f = 1 MHz − 25 − fF F noise figure f = 200 MHz; GS = 2 mS; BS =BSopt − 0.6 − dB f = 800 MHz; GS = 3.3 mS; BS =BSopt − 1 − dB |
Podobny numer części - BF998WR_15 |
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Podobny opis - BF998WR_15 |
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