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BF1101 Arkusz danych(PDF) 4 Page - Quanzhou Jinmei Electronic Co.,Ltd.

Numer części BF1101
Szczegółowy opis  N-channel dual-gate MOS-FETs
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Producent  JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]
Strona internetowa  http://www.jmnic.com
Logo JMNIC - Quanzhou Jinmei Electronic Co.,Ltd.

BF1101 Arkusz danych(HTML) 4 Page - Quanzhou Jinmei Electronic Co.,Ltd.

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1999 May 14
4
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1101; BF1101R; BF1101WR
STATIC CHARACTERISTICS
Tj =25 °C unless otherwise specified.
Note
1. RG1 connects G1 to VGG = 5 V; see Fig.21.
DYNAMIC CHARACTERISTICS
Common source; Tamb =25 °C; VG2-S = 4 V; VDS = 5 V; ID = 12 mA; unless otherwise specified.
Note
1. Measured in test circuit of Fig.21.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage
VG1-S =VG2-S = 0; ID =10 µA7
V
V(BR)G1-SS gate 1-source breakdown voltage
VG2-S =VDS = 0; IG1-S = 10 mA
7
16
V
V(BR)G2-SS gate 2-source breakdown voltage
VG1-S =VDS = 0; IG2-S = 10 mA
7
16
V
V(F)S-G1
forward source-gate 1 voltage
VG2-S =VDS = 0; IS-G1 = 10 mA
0.5
1.5
V
V(F)S-G2
forward source-gate 2 voltage
VG1-S =VDS = 0; IS-G2 = 10 mA
0.5
1.5
V
VG1-S (th)
gate 1-source threshold voltage
VG2-S =4V; VDS =5V; ID = 100 µA
0.3
1.0
V
VG2-S (th)
gate 2-source threshold voltage
VG1-S =5V; VDS =5V; ID = 100 µA
0.3
1.2
V
IDSX
drain-source current
VG2-S =4V; VDS =5V; RG1 = 120 kΩ;
note 1
816
mA
IG1-SS
gate 1 cut-off current
VG2-S =VDS = 0; VG1-S =5V
50
nA
IG2-SS
gate 2 cut-off current
VG1-S =VDS = 0; VG2-S =4V
20
nA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
yfs
forward transfer admittance
pulsed; Tj =25 °C
253040mS
Cig1-ss
input capacitance at gate 1
f = 1 MHz
2.2
2.7
pF
Cig2-ss
input capacitance at gate 2
f = 1 MHz
1.6
pF
Coss
output capacitance
f = 1 MHz
1.2
pF
Crss
reverse transfer capacitance f = 1 MHz
25
35
fF
F
noise figure
f = 800 MHz; YS =YS opt
1.7
2.5
dB
Xmod
cross-modulation
input level for k = 1% at 0 dB AGC;
fw = 50 MHz; funw = 60 MHz; note 1
85
−−
dB
µV
input level for k = 1% at 40 dB AGC;
fw = 50 MHz; funw = 60 MHz; note 1
100
−−
dB
µV


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