1N3893R datasheet(1/3 Pages) GENESIC

Numer części	1N3893R

Szczegółowy opis	High Surge Capability

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Producent	GENESIC [GeneSiC Semiconductor, Inc.]

Strona internetowa	http://www.genesicsemi.com/

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VRRM = 50 V - 400 V

IF = 12 A

Features

• High Surge Capability

DO-4 Package

• Types up to 400 V VRRM

• Not ESD Sensitive

Note:

1. Standard polarity: Stud is cathode.

3. Stud is base.

Parameter

Symbol

1N3889 (R) 1N3890 (R) 1N3891 (R) 1N3892 (R)

Unit

Repetitive peak reverse

voltage

VRRM

50

100

200

300

V

RMS reverse voltage

VRMS

35

70

140

280

V

420

1N3889 thru 1N3893R

Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)

Conditions

Silicon Fast

Recovery Diode

2. Reverse polarity (R): Stud is anode.

1N3893 (R)

400

DC blocking voltage

VDC

50

100

200

400

V

Continuous forward current

IF

12

A

Operating temperature

Tj

-55 to 150

°C

Storage temperature

Tstg

-55 to 150

°C

Parameter

Symbol

1N3889 (R) 1N3890 (R) 1N3891 (R) 1N3892 (R)

Unit

Diode forward voltage

1.4

25

μA

66

6

mA

Recovery Time

Maximum reverse recovery

time

TRR

200

nS

Thermal characteristics

Thermal resistance, junction

- case

RthJC

2.0

°C/W

1N3893 (R)

2.0

12

600

90

25

IF=0.5 A, IR=1.0 A,

IRR= 0.25 A

VR = 50 V, Tj = 150 °C

V

6

200

VR = 50 V, Tj = 25 °C

IF = 12 A, Tj = 25 °C

TC ≤ 100 °C

Conditions

90

TC = 25 °C, tp = 8.3 ms

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Surge non-repetitive forward

current, Half Sine Wave

A

Reverse current

IR

VF

1.4

-55 to 150

IF,SM

90

www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/

1

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