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2SC4467G-X-T3N-T Arkusz danych(PDF) 4 Page - Unisonic Technologies

Numer części 2SC4467G-X-T3N-T
Szczegółowy opis  SILICON NPN TRIPLE DIFFUSED PLANAR TRANSISTOR
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Producent  UTC [Unisonic Technologies]
Strona internetowa  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2SC4467G-X-T3N-T Arkusz danych(HTML) 4 Page - Unisonic Technologies

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2SC4467
NPN EPITAXIAL SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
4 of 4
www.unisonic.com.tw
QW-R214-018.B
TYPICAL CHARACTERISTICS
0
Emitter Current vs.
Emitter-Base Voltage
48
12
Emitter-Base Voltage, VEBO (V)
0
10
20
30
40
50
60
20
1.5
2
2.5
0
1
2
3
4
0
Collector Current vs.
Collector-Emitter Voltage
Collector-Emitter Voltage, VCE (V)
0.5
1
16
3
5
6
IB=40mA
IB=20mA
IB=60mA
IB=80mA
IB=100mA
IB=120mA
IB=140mA
IB=160mA
IB=180mA
IB=200mA
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.


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