2N50KL-TF1-T datasheet(4/7 Pages) UTC

Numer części	2N50KL-TF1-T

Szczegółowy opis	N-CHANNEL JUNCTIN SILICON FET

Download	7 Pages

Scroll/Zoom	100%

Producent	UTC [Unisonic Technologies]

Strona internetowa	http://www.utc-ic.com

Logo

4 / 7 page

2N50K-TA

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

4 of 7

www.unisonic.com.tw

QW-R205-031.A



ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

ID=250µA, VGS=0V

500

V

Drain-Source Leakage Current

IDSS

VDS=500V, VGS=0V

25

µA

Gate- Source Leakage Current

Forward

IGSS

VGS=+30V, VDS=0V

+100 nA

Reverse

VGS=-30V, VDS=0V

-100 nA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250µA

3.0

5.0

V

Static Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=1A

2.6

4.9

Ω

DYNAMIC PARAMETERS

Input Capacitance

CISS

VGS=0V, VDS=25V, f=1.0MHz

200

pF

Output Capacitance

COSS

39

pF

Reverse Transfer Capacitance

CRSS

16

pF

SWITCHING PARAMETERS

Total Gate Charge

QG

VGS=10V, VDS=400V, ID=2A

(Note 1, 2)

12

25

nC

Gate to Source Charge

QGS

5.6

3

nC

Gate to Drain Charge

QGD

2

15

nC

Turn-ON Delay Time

tD(ON)

VDD=250V, ID=2A, RG=25Ω

(Note 1, 2)

20

ns

Rise Time

tR

40

ns

Turn-OFF Delay Time

tD(OFF)

84

ns

Fall-Time

tF

38

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

IS

2

A

Maximum Body-Diode Pulsed Current

ISM

8

A

Drain-Source Diode Forward Voltage

VSD

IS=2A, VGS=0V

1.2

V

Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature

Podobny numer części - 2N50KL-TF1-T

Producent	Numer części	Arkusz danych	Szczegółowy opis
Unisonic Technologies	2N50	173Kb / 6P	2 Amps, 500 Volts N-CHANNEL POWER MOSFET
Unisonic Technologies	2N50	181Kb / 6P	2A, 500V N-CHANNEL POWER MOSFET
New Jersey Semi-Conduct...	2N5000	108Kb / 2P	N-P-N SILICON POWER TRANSISTORS
List of Unclassifed Man...	2N5001	280Kb / 6P	HIGH ENERCY NPN TRANSISTOR
New Jersey Semi-Conduct...	2N5001	129Kb / 1P	30 WATT PNP POWER TRANSISTOR

More results

Podobny opis - 2N50KL-TF1-T

Producent	Numer części	Arkusz danych	Szczegółowy opis
Unisonic Technologies	UT3458	180Kb / 4P	N-CHANNEL JUNCTIN SILICON FET
	4N70K-TA	271Kb / 7P	N-CHANNEL JUNCTIN SILICON FET
	4N60K-MT	241Kb / 7P	N-CHANNEL JUNCTIN SILICON FET
	11NM40	229Kb / 6P	N-CHANNEL JUNCTIN SILICON FET
	13N50K	208Kb / 7P	N-CHANNEL JUNCTIN SILICON FET
	2N70K	283Kb / 6P	N-CHANNEL JUNCTIN SILICON FET
	3N70K-MK	212Kb / 6P	N-CHANNEL JUNCTIN SILICON FET
	UT4114	179Kb / 4P	N-CHANNEL JUNCTIN SILICON FET
	2SK3666	150Kb / 4P	N-CHANNEL JUNCTIN SILICON FET
	UT75N03	197Kb / 3P	N-CHANNEL JUNCTIN SILICON FET

More results

2N50KL-TF1-T Arkusz danych(PDF) 4 Page - Unisonic Technologies

2N50KL-TF1-T Arkusz danych(HTML) 4 Page - Unisonic Technologies

Podobny numer części - 2N50KL-TF1-T

Podobny opis - 2N50KL-TF1-T

Html Pages

1 2 3 4 5 6 7

Arkusz danych Pobierz

Link URL