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LM34917A Arkusz danych(PDF) 2 Page - Texas Instruments

Numer części LM34917A
Szczegółowy opis  Ultra Small 33V, 1.25A Constant On-Time Buck Switching Regulator with Intelligent Current Limit
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Producent  TI [Texas Instruments]
Strona internetowa  http://www.ti.com
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LM34917A Arkusz danych(HTML) 2 Page - Texas Instruments

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D3
D2
D1
C3
C2
C1
B3
B2
B1
A3
A2
A1
SW
VIN
RON
RTN
BST
VCC
SS
FB
SW
VIN
ISEN
SGND
D1
D2
D3
C1
C2
C3
B1
B2
B3
A1
A2
A3
LM34917A
SNOSAX7D – DECEMBER 2007 – REVISED MARCH 2013
www.ti.com
Connection Diagram
Figure 1. Bump Side
Figure 2. Top View
Package Number YZR0012UNA
Package Number YZR0012UNA
PIN DESCRIPTIONS
Pin Number
Name
Description
Application Information
A1
SGND
Sense Ground
Re-circulating current flows into this pin to the current sense
resistor.
A2
RTN
Circuit Ground
Ground for all internal circuitry other than the current limit
detection.
A3
FB
Feedback input from the regulated
Internally connected to the regulation and over-voltage
output
comparators. The regulation level is 2.5V.
B1
ISEN
Current sense
The re-circulating current flows out of this pin to the free-
wheeling diode.
B2
RON/SD
On-time control and shutdown
An external resistor from VIN to this pin sets the buck switch
on-time. Grounding this pin shuts down the regulator.
B3
SS
Softstart
An internal current source charges an external capacitor to
2.5V, providing the softstart function.
C1,C2
VIN
Input supply voltage
Operating input range is 8.0V to 33V, with over-voltage
shutdown internally set at
≊35V. Transient capability is 50V.
C3
VCC
Output from the startup regulator
Nominally regulated at 7.0V. Connect a 0.1 µF capacitor from
this pin to RTN. An external voltage (8V to 14V) can be
applied to this pin to reduce internal dissipation. An internal
diode connects VCC to VIN.
D1,D2
SW
Switching Node
Internally connected to the buck switch source. Connect to
the inductor, diode, and bootstrap capacitor.
D3
BST
Boost pin for bootstrap capacitor
Connect a 0.022 µF capacitor from SW to this pin. The
capacitor is charged each off-time via an internal diode.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
2
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Copyright © 2007–2013, Texas Instruments Incorporated
Product Folder Links: LM34917A


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