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SI7748DP Arkusz danych(PDF) 1 Page - Vishay Telefunken |
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SI7748DP Arkusz danych(HTML) 1 Page - Vishay Telefunken |
1 / 13 page Si7748DP www.vishay.com Vishay Siliconix S14-1030-Rev. B, 12-May-14 1 Document Number: 68785 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 N-Channel 30 V (D-S) MOSFET with Schottky Diode Ordering Information: Si7748DP-T1-GE3 (lead (Pb)-free and halogen-free) FEATURES •SkyFETTM monolithic TrenchFET® power MOSFET and Schottky diode • 100 % Rg and UIS tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Notebook - Vcore low-side Notes a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 68 °C/W. PRODUCT SUMMARY VDS (V) RDS(on) ( Ω)ID (A) a Qg (TYP.) 30 0.0048 at VGS = 10 V 50 27.8 nC 0.0066 at VGS = 4.5 V 50 PowerPAK® SO-8 Single Top View 1 6.15 mm 5.15 mm Bottom View 4 G 3 S 2 S 1 S D 8 D 6 D 7 D 5 N-Channel MOSFET G S D Schottky Diode ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 50 a A TC = 70 °C 50 a TA = 25 °C 23.5 b, c TA = 70 °C 18.6 b, c Pulsed Drain Current (t = 100 μs) IDM 150 Continuous Source-Drain Diode Current TC = 25 °C IS 50 a TA = 25 °C 4.3 b, c Single Pulse Avalanche Current L = 0.1 mH IAS 30 Single Pulse Avalanche Energy EAS 45 mJ Maximum Power Dissipation TC = 25 °C PD 56 W TC = 70 °C 31 TA = 25 °C 4.8 b, c TA = 70 °C 3 b, c Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 °C Soldering Recommendations (Peak Temperature) d, e 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT Maximum Junction-to-Ambient b, f t ≤ 10 s RthJA 21 26 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 1.7 2.2 |
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