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SI7748DP Arkusz danych(PDF) 1 Page - Vishay Telefunken

Numer części SI7748DP
Szczegółowy opis  N-Channel 30 V (D-S) MOSFET with Schottky Diode
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Producent  TFUNK [Vishay Telefunken]
Strona internetowa  http://www.vishay.com
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Si7748DP
www.vishay.com
Vishay Siliconix
S14-1030-Rev. B, 12-May-14
1
Document Number: 68785
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-Channel 30 V (D-S) MOSFET with Schottky Diode
Ordering Information:
Si7748DP-T1-GE3 (lead (Pb)-free and halogen-free)
FEATURES
•SkyFETTM monolithic TrenchFET® power
MOSFET and Schottky diode
• 100 % Rg and UIS tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Notebook
- Vcore low-side
Notes
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 68 °C/W.
PRODUCT SUMMARY
VDS (V)
RDS(on) (
Ω)ID (A) a
Qg (TYP.)
30
0.0048 at VGS = 10 V
50
27.8 nC
0.0066 at VGS = 4.5 V
50
PowerPAK® SO-8 Single
Top View
1
6.15
mm
5.15
mm
Bottom View
4
G
3
S
2
S
1
S
D
8
D
6
D
7
D
5
N-Channel MOSFET
G
S
D
Schottky Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
50 a
A
TC = 70 °C
50 a
TA = 25 °C
23.5 b, c
TA = 70 °C
18.6 b, c
Pulsed Drain Current (t = 100 μs)
IDM
150
Continuous Source-Drain Diode Current
TC = 25 °C
IS
50 a
TA = 25 °C
4.3 b, c
Single Pulse Avalanche Current
L = 0.1 mH
IAS
30
Single Pulse Avalanche Energy
EAS
45
mJ
Maximum Power Dissipation
TC = 25 °C
PD
56
W
TC = 70 °C
31
TA = 25 °C
4.8 b, c
TA = 70 °C
3 b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to 150
°C
Soldering Recommendations (Peak Temperature) d, e
260
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
UNIT
Maximum Junction-to-Ambient b, f
t
≤ 10 s
RthJA
21
26
°C/W
Maximum Junction-to-Case (Drain)
Steady State
RthJC
1.7
2.2


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