SI1302DL datasheet(2/9 Pages) TFUNK

Numer części	SI1302DL

Szczegółowy opis	N-Channel 30-V (D-S) MOSFET

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Document Number: 71249

S10-2140-Rev. F, 20-Sep-10

Vishay Siliconix

Si1302DL

Notes:

a. Pulse test; pulse width

 300 µs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ

Max.

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

1

3

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 30 V, VGS = 0 V

1

µA

VDS = 30 V, VGS = 0 V, TJ = 70 °C

5

On-State Drain Currenta

ID(on)

VDS = 5 V, VGS = 10 V

1.5

A

Drain-Source On-State Resistancea

RDS(on)

VGS = 10 V, ID = 0.6 A

0.410

0.480



VGS = 4.5 V, ID = 0.2 A

0.600

0.700

Forward Transconductancea

gfs

VGS = 15 V, ID = 0.6 A

0.75

S

Diode Forward Voltagea

VSD

IS = 0.23 A, VGS = 0 V

0.8

1.2

V

Dynamicb

Total Gate Charge

Qg

VDS = 15 V, VGS = 10 V, ID = 0.6 A

0.86

1.4

nC

Gate-Source Charge

Qgs

0.24

Gate-Drain Charge

Qgd

0.08

Turn-On Delay Time

td(on)

VDD = 15 V, RL = 30 

ID  0.5 A, VGEN = 10 V, Rg = 6 

510

ns

Rise Time

tr

815

Turn-Off DelayTime

td(off)

815

Fall Time

tf

715

Source-Drain Reverse Recovery Time

trr

IF = 0.23 A, dI/dt = 100 A/µs

15

30

Output Characteristics

0.0

0.2

0.4

0.6

0.8

1.0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VGS = 10 V thru 4 V

3 V

VDS - Drain-to-Source Voltage (V)

Transfer Characteristics

0.0

0.2

0.4

0.6

0.8

1.0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

TC = 125 °C

- 55 °C

25 °C

VGS - Gate-to-Source Voltage (V)

Podobny numer części - SI1302DL

Producent	Numer części	Arkusz danych	Szczegółowy opis
Vishay Siliconix	SI1302DL	39Kb / 4P	N-Channel 30-V (D-S) MOSFET Rev. C, 23-Oct-00
	SI1302DL	68Kb / 5P	N-Channel 30-V (D-S) MOSFET S-02367-Rev. C, 23-Oct-00
	SI1302DL	214Kb / 9P	N-Channel 30-V (D-S) MOSFET Rev. F, 20-Sep-10
	SI1302DL	218Kb / 9P	N-Channel 30-V (D-S) MOSFET Rev. F, 20-Sep-10
	SI1302DL	220Kb / 9P	N-Channel 30-V (D-S) MOSFET 01-Jan-2022

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Podobny opis - SI1302DL

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	SI4892DY	71Kb / 4P	N-Channel 30-V (D-S) MOSFET Rev. F, 01-Aug-05
Vaishali Semiconductor	SI4356ADY	143Kb / 3P	N-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SIRA00DP	513Kb / 13P	N-Channel 30 V (D-S) MOSFET Rev. A, 13-Feb-12
	SIRA04DP	513Kb / 13P	N-Channel 30 V (D-S) MOSFET Rev. A, 13-Feb-12
	SIRA14DP	513Kb / 13P	N-Channel 30 V (D-S) MOSFET Rev. A, 12-Mar-12

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