SI2392ADS datasheet(1/10 Pages) TFUNK

Numer części	SI2392ADS

Szczegółowy opis	N-Channel 100 V (D-S) MOSFET

Download	10 Pages

Scroll/Zoom	100%

Producent	TFUNK [Vishay Telefunken]

Strona internetowa	http://www.vishay.com

Logo

1 / 10 page

Si2392ADS

www.vishay.com

Vishay Siliconix

S14-0909-Rev. A, 28-Apr-14

1

Document Number: 62960

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

N-Channel 100 V (D-S) MOSFET

Marking Code: G2

Ordering Information:

Si2392ADS-T1-GE3 (Lead (Pb)-free and Halogen-free)

FEATURES

• TrenchFET® power MOSFET

• 100 % Rg and UIS tested

• Material categorization:

For definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

• DC/DC converters / boost converters

•Load switch

• LED backlighting in LCD TVs

• Power

management

for

mobile

computing

Notes

a. Based on TC = 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under steady state conditions is 166 °C/W.

PRODUCT SUMMARY

VDS (V)

RDS(on) (

Ω) MAX.

ID (A) a

Qg (TYP.)

100

0.126 at VGS = 10 V

3.1

2.9 nC

0.144 at VGS = 6 V

2.9

0.189 at VGS = 4.5 V

2.6

Top View

SOT-23 (TO-236)

1

G

2

S

D

3

N-Channel MOSFET

G

D

S

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

100

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

3.1

A

TC = 70 °C

2.5

TA = 25 °C

2.2 b, c

TA = 70 °C

1.8 b, c

Pulsed Drain Current (t = 300 μs)

IDM

8

Continuous Source-Drain Diode Current

TC = 25 °C

IS

2.1

TA = 25 °C

1 b, c

Single Pulse Avalanche Current

L = 0.1 mH

IAS

3

Single Pulse Avalanche Energy

EAS

0.45

mJ

Maximum Power Dissipation

TC = 25 °C

PD

2.5

W

TC = 70 °C

1.6

TA = 25 °C

1.25 b, c

TA = 70 °C

0.8 b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYPICAL

MAXIMUM

UNIT

Maximum Junction-to-Ambient b, d

t

≤ 5 s

RthJA

75

100

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

40

50

Podobny numer części - SI2392ADS

Producent	Numer części	Arkusz danych	Szczegółowy opis
Vishay Siliconix	SI2392ADS	260Kb / 10P	N-Channel 100 V (D-S) MOSFET Rev. A, 28-Apr-14
	SI2392ADS	212Kb / 9P	N-Channel 100 V (D-S) MOSFET 01-Jan-2022
	SI2392ADS-T1-GE3	212Kb / 9P	N-Channel 100 V (D-S) MOSFET 01-Jan-2022
	SI2392ADS	212Kb / 9P	N-Channel 100 V (D-S) MOSFET 01-Jan-2022

More results

Podobny opis - SI2392ADS

Producent	Numer części	Arkusz danych	Szczegółowy opis
Vishay Siliconix	SI2328DS	41Kb / 4P	N-Channel 100-V (D-S) MOSFET Rev. A, 25-Dec-01
	SIR870ADP_1209	481Kb / 13P	N-Channel 100 V (D-S) MOSFET Rev. A, 28-Nov-11
	SIR876DP	191Kb / 9P	N-Channel 100 V (D-S) MOSFET Rev. B, 22-Nov-10
	SIR882ADP	336Kb / 14P	N-Channel 100 V (D-S) MOSFET Rev. A, 15-Aug-11
	SI7456CDP	132Kb / 7P	N-Channel 100 V (D-S) MOSFET Rev. A, 05-Apr-10
Analog Power	AM90N10-07B	365Kb / 5P	N-Channel 100-V (D-S) MOSFET
Analog Power	AM290N10-02FP	317Kb / 5P	N-Channel 100-V (D-S) MOSFET
Vishay Siliconix	SUM70040M	173Kb / 8P	N-Channel 100 V (D-S) MOSFET Rev. A, 17-Aug-15
	SUA70060E	200Kb / 8P	N-Channel 100 V (D-S) MOSFET Rev. A, 06-Jun-16
	SUD70090E	201Kb / 8P	N-Channel 100 V (D-S) MOSFET Rev. A, 01-Feb-16
	SI2392DS	245Kb / 10P	N-Channel 100 V (D-S) MOSFET Rev. A, 15-Apr-13

More results

SI2392ADS Arkusz danych(PDF) 1 Page - Vishay Telefunken

SI2392ADS Arkusz danych(HTML) 1 Page - Vishay Telefunken

Podobny numer części - SI2392ADS

Podobny opis - SI2392ADS

Html Pages

1 2 3 4 5 6 7 8 9 10

Arkusz danych Pobierz

Link URL