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N01S830HA Arkusz danych(PDF) 9 Page - ON Semiconductor

Numer części N01S830HA
Szczegółowy opis  1 Mb Ultra-Low Power Serial SRAM
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Producent  ONSEMI [ON Semiconductor]
Strona internetowa  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

N01S830HA Arkusz danych(HTML) 9 Page - ON Semiconductor

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N01S830HA, N01S830BA
http://onsemi.com
9
Table 5. MODE REGISTER
Bit
Function
0
Hold Function
1 = Hold function disabled
0 = Hold function enabled (Default)
1
Reserved
2
Reserved
3
Reserved
4
Reserved
5
Reserved
6
Operating Mode
Bit 7
Bit 6
0
0 = Word Mode
1
0 = Page Mode
0
1 = Burst Mode (Default)
1
1 = Reserved
7
Power-Up State
The serial SRAM enters a know state at power-up time.
The device is in low-power standby state with CS = 1. A low
level on CS is required to enter a active state.
Battery Back-Up Operation
The Battery Back-Up function is available on the BBU
version of the serial SRAM. This version of the SRAM
cannot operate in the QUAD mode since the SIO3 input is
used for the VBAT connection. A standard coin cell battery
should be connected to the VBAT pin. On chip circuitry
monitors the VCC pin and when it is determined that the main
VCC power supply is turning off, the device automatically
switches the memory array to VBAT power input. When in
battery back-up mode and 3.0 to 3.4 V power supplied to the
VBAT input, memory data is retained in the SRAM array
and all existing interface and operating mode information is
retained.
Figure 15. Battery Back-Up Version Schematics
SO
NC
VSS
VCC
SCK
SI
Coin Cell Battery
3.0 to 3.4 V
VBAT
Serial
SRAM
CS
Table 6. ABSOLUTE MAXIMUM RATINGS
Item
Symbol
Rating
Units
Voltage on any pin relative to VSS
VIN,OUT
–0.3 to VCC + 0.3
V
Voltage on VCC Supply Relative to VSS
VCC
–0.3 to 5.5
V
Power Dissipation
PD
500
mW
Storage Temperature
TSTG
–40 to 125
°C
Operating Temperature
TA
-40 to +85
°C
Soldering Temperature and Time
TSOLDER
260°C, 10 sec
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 7. OPERATING CHARACTERISTICS (OVER SPECIFIED TEMPERATURE RANGE)
Item
Symbol
Test Conditions
Min
Typ (Note 1)
Max
Units
Supply Voltage
VCC
2.5
5.5
V
Data Retention Voltage (Note 2)
VDR
1.0
V
Input High Voltage
VIH
0.7 VCC
VCC + 0.3
V
Input Low Voltage
VIL
−0.3
0.1 VCC
V
Output High Voltage
VOH
IOH = −0.4 mA
VCC − 0.2
V
Output Low Voltage
VOL
IOL = 1 mA
0.2
V
Input Leakage Current
ILI
CS = VCC, VIN = 0 to VCC
1.0
mA
Output Leakage Current
ILO
CS = VCC, VOUT = 0 to VCC
1.0
mA
Operating Current
ICC
f = 20 MHz, IOUT = 0, SPI / DUAL
10
mA
f = 20 MHz, IOUT = 0, QUAD
20
Standby Current
ISB
CS = VCC, VIN = VSS or VCC
4
10
mA
1. Typical values are measured at VCC = VCC Typ., TA = 25°C and are not 100% tested.
2. Typical lower limit of VCC when data will be retained in the memory array, not 100% tested.


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