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MSAFX76N07A Arkusz danych(PDF) 2 Page - Microsemi Corporation |
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MSAFX76N07A Arkusz danych(HTML) 2 Page - Microsemi Corporation |
2 / 2 page DESCRIPTION SYMBOL CONDITIONS MIN TYP. MAX UNIT Drain-to-Source Breakdown Voltage (Gate Shorted to Source) BVDSS VGS = 0 V, ID = 250 µA 70 V Temperature Coefficient of the Drain-to-Source Breakdown Voltage ∆BV DSS/ ∆T J tbd V/ °C Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.0 3.4 V Gate-to-Source Leakage Current IGSS VGS = ± 20V DC, VDS = 0 T J = 25 °C T J = 125 °C ±100 ±200 nA Drain-to-Source Leakage Current (Zero Gate Voltage Drain Current) IDSS VDS =0.8 •BV DSS TJ = 25 °C VGS = 0 V T J = 125 °C 100 500 µA Static Drain-to-Source On-State Resistance (1) RDS(on) VGS= 10V, ID= 40 A T J = 25 °C I D= 75 A T J = 25 °C I D= 40 A T J = 125 °C 0.015 0.025 0.012 Ω Forward Transconductance (1) gfs VDS ≥ 10 V; I D = 40 A 30 40 S Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VGS = 0 V, VDS = 25 V, f = 1 MHz 4400 2000 1200 pF Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time td(on) tr td(off) tf VGS = 10 V, V DS = 50 V, ID = 30 A, R G = 1.00 Ω 40 70 130 55 ns Total Gate Charge Gate-to-Source Charge Gate-to-Drain (Miller) Charge Qg(on) Qgs Qgd VGS = 10 V, V DS = 50V, ID = 40 A 240 30 120 nC Body Diode Forward Voltage (1) VSD IF = IS, VGS = 0 V 1.5 V Reverse Recovery Time (Body Diode) trr IF = 10 A, 25 C -di/dt = 100 A/ µs, 125 C 150 250 ns Reverse Recovery Charge Qrr IF = 10 A, 25 C di/dt = 100 A/ µs, 125 C tbd tbd µC Electrical Parameters @ 25 °°C (unless otherwise specified) Notes (1) Pulse test, t ≤≤ 300 µµs, duty cycle δδ ≤≤ 2% (2) Microsemi Corp. does not manufacture the mosfet die; contact company for details. MSAFX76N07A |
Podobny numer części - MSAFX76N07A |
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Podobny opis - MSAFX76N07A |
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