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SM72295 Arkusz danych(PDF) 4 Page - Texas Instruments

Numer części SM72295
Szczegółowy opis  SM72295 Photovoltaic Full Bridge Driver
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Strona internetowa  http://www.ti.com
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SM72295 Arkusz danych(HTML) 4 Page - Texas Instruments

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SM72295
SNVS688E – OCTOBER 2010 – REVISED APRIL 2013
www.ti.com
Recommended Operating Conditions
VCCA,VCCB
+8V to +14V
VDD
+3V to 7V
SI, SO common mode
VDD+1V to 100V
HS(1)
-1V to 100V
HBA, HBB
HS+7V to HS+14V
HS Slew Rate
<50V/ns
Junction Temperature
-40°C to +125°C
(1)
In the application the HS nodes are clamped by the body diode of the external lower N-MOSFET, therefore the HS node will generally
not exceed –1V. However, in some applications, board resistance and inductance may result in the HS node exceeding this stated
voltage transiently. If negative transients occur, the HS voltage must never be more negative than VCC-15V. For example if VCC = 10V,
the negative transients at HS must not exceed –5V.
Electrical Characteristics
(1)
Specifications in standard typeface are for TJ = 25°C, and those in boldface type apply over the full operating junction
temperature range. No load on LO & HO, VCC = 10V, VDD = 5V, HB-HS = 10V, OVS = 0V unless otherwise indicated.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
SUPPLY CURRENTS
IDD
VDD Quiescent Current
SIA = SOB, SIB = SOB.
25
40
μA
VCC Quiescent Current
ICC
All outputs off
500
800
μA
(ICCA+ICCB)
VCC Operating Current
ICCO
LOA & LOB switching at 200kHz
2.2
3
mA
(ICCA+ICCB)
IHB
HBA, HBB Quiescent Current
All outputs off
55
200
μA
IHBO
HBA, HBB Operating Current
HOA & HOB switching at 200kHz
700
1000
μA
HBA & HBB to VSS Current,
IHBS
HS = 100V, HB = 110V
0.1
10
μA
Quiescent
HBA and HBB to VSS Current,
IHBSO
f = 200kHz
130
μA
Operating
PGOOD, OVB OUTPUTs
VOL
Output Low RDS
25
50
RPU
VDD pull up resistor
50
90
k
LI ,HI INPUT PINS
VIL
Input Voltage Threshold
1.3
1.8
2.3
V
VIHYS
Input Voltage Hysteresis
50
mV
RI
LI, HI Pull down Resistance
100
200
400
k
OVER VOLTAGE SHUTDOWN
VOVR
OVS Rising Threshold
VDD-50mV
VDD
VDD+50mV
V
VOVH
OVS threshold Hysteresis
5%
VDD
IOVS
OVS input bias current
OVS<VDD
1
nA
UNDER VOLTAGE SHUTDOWN
VCCR
VCC Rising Threshold
6
6.9
7.4
V
VCCH
VCC threshold Hysteresis
0.5
V
VHBR
HB-HS Rising Threshold
5.7
6.6
7.1
V
VHBH
HB-HS Threshold Hysteresis
0.4
V
BOOT STRAP DIODE
VDH
High-Current Forward Voltage
IVCC-HB = 100mA
0.8
1
V
RD
Dynamic Resistance
IVCC-HB = 100mA
1
1.65
(1)
Min and Max limits are 100% production tested at 25ºC. Limits over the operating temperature range are ensured through correlation
using Statistical Quality Control (SQC) methods. Limits are used to calculate Average Outgoing Quality Level (AOQL).
4
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