MTBA0N10KJ3 datasheet(5/9 Pages) CYSTEKEC

Numer części	MTBA0N10KJ3

Szczegółowy opis	N-Channel Enhancement Mode Power MOSFET

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Producent	CYSTEKEC [Cystech Electonics Corp.]

Strona internetowa	http://www.cystekec.com

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5 / 9 page

CYStech Electronics Corp.

Spec. No. : C139J3

Issued Date : 2015.09.30

Revised Date :

Page No. : 5/ 9

MTBA0N10KJ3

CYStek Product Specification

Typical Characteristics(Cont.)

Capacitance vs Drain-to-Source Voltage

10

100

1000

0.1

1

10

100

VDS, Drain-Source Voltage(V)

C oss

Ciss

Crss

Threshold Voltage vs Junction Tempearture

0.4

0.6

0.8

1

1.2

1.4

-75 -50 -25

0

25

50

75 100 125 150 175

Tj, Junction Temperature(°C)

ID=250

μA

ID=1mA

Forward Transfer Admittance vs Drain Current

0.01

0.1

1

10

0.001

0.01

0.1

1

10

ID, Drain Current(A)

Ta=25°C

Pulsed

VDS=10V

Gate Charge Characteristics

0

2

4

6

8

10

024

68

10

12

Qg, Total Gate Charge(nC)

ID=13.4A

VDS=80V

VDS=50V

Maximum Safe Operating Area

0.01

0.1

1

10

100

0.1

1

10

100

1000

VDS, Drain-Source Voltage(V)

TC=25°C, Tj=150°C

VGS=10V, RθJC=3.8°C/W

Single Pulse

DC

100ms

RDSON

Limited

1s

100

μs

1ms

10ms

Maximum Drain Current vs Case Temperature

0

3

6

9

12

15

25

50

75

100

125

150

175

TC, Case Temperature(°C)

Tj(max)=150°C, VGS=10V,

RθJC=3.8°C/W

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