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MTBA0N10KJ3 Arkusz danych(PDF) 5 Page - Cystech Electonics Corp. |
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MTBA0N10KJ3 Arkusz danych(HTML) 5 Page - Cystech Electonics Corp. |
5 / 9 page CYStech Electronics Corp. Spec. No. : C139J3 Issued Date : 2015.09.30 Revised Date : Page No. : 5/ 9 MTBA0N10KJ3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 10 100 1000 0.1 1 10 100 VDS, Drain-Source Voltage(V) C oss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=250 μA ID=1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 1 10 0.001 0.01 0.1 1 10 ID, Drain Current(A) Ta=25°C Pulsed VDS=10V Gate Charge Characteristics 0 2 4 6 8 10 024 68 10 12 Qg, Total Gate Charge(nC) ID=13.4A VDS=80V VDS=50V Maximum Safe Operating Area 0.01 0.1 1 10 100 0.1 1 10 100 1000 VDS, Drain-Source Voltage(V) TC=25°C, Tj=150°C VGS=10V, RθJC=3.8°C/W Single Pulse DC 100ms RDSON Limited 1s 100 μs 1ms 10ms Maximum Drain Current vs Case Temperature 0 3 6 9 12 15 25 50 75 100 125 150 175 TC, Case Temperature(°C) Tj(max)=150°C, VGS=10V, RθJC=3.8°C/W |
Podobny numer części - MTBA0N10KJ3 |
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Podobny opis - MTBA0N10KJ3 |
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