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FW276 Arkusz danych(PDF) 2 Page - ON Semiconductor |
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FW276 Arkusz danych(HTML) 2 Page - ON Semiconductor |
2 / 6 page FW276 No.A2289-2/6 Continued from preceding page. Parameter Symbol Conditions Value Unit min typ max Turn-ON Delay Time td(on) See Fig.1 7 ns Rise Time tr 10 ns Turn-OFF Delay Time td(off) 15 ns Fall Time tf 46 ns Total Gate Charge Qg VDS=200V, VGS=10V, ID=0.7A 3.7 nC Gate to Source Charge Qgs 1 nC Gate to Drain “Miller” Charge Qgd 1.6 nC Diode Forward Voltage VSD IS=0.7A, VGS=0V 0.85 1.2 V Reverse Recovery Time trr See Fig.2 76 ns Reverse Recovery Charge Qrr IS=0.7A, VGS=0V, di/dt=100A/μs 210 nC Fig.1 Switching Time Test Circuit Fig.2 Reverse Recovery Time Test Circuit VDD FW276 L Driver MOSFET G S D |
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