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2SA1699 Arkusz danych(PDF) 1 Page - ON Semiconductor |
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2SA1699 Arkusz danych(HTML) 1 Page - ON Semiconductor |
1 / 3 page Ordering number : ENN2973 © 2011, SCILLC. All rights reserved. Jan-2011, Rev. 0 www.onsemi.com Publication Order Number: 2SA1699/D Specifications Absolute Maximum Ratings at Ta = 25˚C Electrical Characteristics at Ta = 25˚C Package Dimensions unit:mm 2003B [2SA1699] Features · High breakdown voltage. · Adoption of MBIT process. · Excellent hFE linearity. r e t e m a r a Pl o b m y Ss n o i t i d n o Cs g n i t a Rt i n U e g a t l o V e s a B - o t - r o t c e ll o CV O B C 0 0 4 –V e g a t l o V r e t t i m E - o t - r o t c e ll o CV O E C 0 0 4 –V e g a t l o V e s a B - o t - r e t t i m EV O B E 5 –V t n e r r u C r o t c e ll o CIC 0 0 2 –A m ) e s l u P ( t n e r r u C r o t e ll o CI P C 0 0 4 –A m n o i t a p i s s i D r o t c e ll o CPC 0 0 6W m e r u t a r e p m e T n o i t c n u Jj T 0 5 1 e r u t a r e p m e T e g a r o t Sg t s T 0 5 1 + o t 5 5 – JEDEC : TO-92 1 : Emitter EIAJ : SC-43 2 : Collector SANYO : NP 3 : Base ˚C ˚C r e t e m a r a Pl o b m y Ss n o i t i d n o C s g n i t a R t i n U n i mp y tx a m t n e r r u C f f o t u C r o t c e ll o CI O B C V B C I , V 0 0 3 – = E 0 =1 . 0 –A μ t n e r r u C f f o t u C r e t t i m EI O B E V B E I , V 4 – = C 0 =1 . 0 –A μ n i a G t n e r r u C C D h E F V E C I , V 0 1 – = C A m 0 5 – =* 0 6* 0 0 2 t c u d o r P h t d i w d n a B - n i a GfT V E C I , V 0 3 – = C A m 0 1 – =0 7z H M 5.0 4.0 0.5 0.45 0.45 4.0 0.44 1.3 1.3 12 3 k n a RD E h E F 0 2 1 o t 0 60 0 2 o t 0 0 1 * : The 2SA1699 is classified by 50mA hFE as follows : Continued on next page. 2SA1699 PNP Epitaxial Planar Silicon Transistors High-Voltage Driver Applications |
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