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IRF830 Arkusz danych(PDF) 2 Page - ON Semiconductor |
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IRF830 Arkusz danych(HTML) 2 Page - ON Semiconductor |
2 / 3 page IRF830 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc) V(BR)DSS 500 — Vdc Zero Gate Voltage Drain Current (VDS = Rated VDSS, VGS = 0 Vdc) (VDS = 0.8 Rated VDSS, VGS = 0 Vdc, TJ = 125°C) IDSS — — 0.2 1.0 mAdc Gate−Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0) IGSS(f) — 100 nAdc Gate−Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0) IGSS(r) — 100 nAdc ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = VGS, ID = 0.25 mA) VGS(th) 2.0 4.0 Vdc Static Drain−to−Source On−Resistance (VGS = 10 Vdc, ID = 2.5 Adc) RDS(on) — 1.5 Ohm On−State Drain Current (VGS = 10 V) (VDS ≥ 6.75 Vdc) ID(on) 4.5 — Adc Forward Transconductance (VDS ≥ 6.75 Vdc, ID = 2.5 Adc) gFS 2.5 — mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss — 800 pF Output Capacitance Coss — 200 Reverse Transfer Capacitance Crss — 60 SWITCHING CHARACTERISTICS (1) Turn−On Delay Time (VDD = 200 Vdc, ID = 2.5 Apk, RG = 15 Ω) td(on) — 30 ns Rise Time tr — 30 Turn−Off Delay Time td(off) — 55 Fall Time tf — 30 Total Gate Charge (VDS = 0.8 Rated VDSS, VGS = 10 Vdc, ID = Rated ID) Qg 22 (Typ) 30 nC Gate−Source Charge Qgs 12 (Typ) — Gate−Drain Charge Qgd 10 (Typ) — SOURCE−DRAIN DIODE CHARACTERISTICS (1) Forward On−Voltage (IS = Rated ID, VGS = 0) VSD 1.1 (Typ) 1.6 Vdc Forward Turn−On Time ton Limited by stray inductance Reverse Recovery Time trr 450 (Typ) — ns INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the contact screw on tab to center of die) (Measured from the drain lead 0.25″ from package to center of die) LD 3.5 (Typ) 4.5 (Typ) — — nH Internal Source Inductance (Measured from the source lead 0.25″ from package to source bond pad) LS 7.5 (Typ) — (1) Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%. |
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