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IRF830 Arkusz danych(PDF) 2 Page - ON Semiconductor

Numer części IRF830
Szczegółowy opis  Power Field Effect Transistor
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Producent  ONSEMI [ON Semiconductor]
Strona internetowa  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

IRF830 Arkusz danych(HTML) 2 Page - ON Semiconductor

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IRF830
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
V(BR)DSS
500
Vdc
Zero Gate Voltage Drain Current
(VDS = Rated VDSS, VGS = 0 Vdc)
(VDS = 0.8 Rated VDSS, VGS = 0 Vdc, TJ = 125°C)
IDSS
0.2
1.0
mAdc
Gate−Body Leakage Current, Forward
(VGSF = 20 Vdc, VDS = 0)
IGSS(f)
100
nAdc
Gate−Body Leakage Current, Reverse
(VGSR = 20 Vdc, VDS = 0)
IGSS(r)
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mA)
VGS(th)
2.0
4.0
Vdc
Static Drain−to−Source On−Resistance
(VGS = 10 Vdc, ID = 2.5 Adc)
RDS(on)
1.5
Ohm
On−State Drain Current (VGS = 10 V)
(VDS ≥ 6.75 Vdc)
ID(on)
4.5
Adc
Forward Transconductance
(VDS ≥ 6.75 Vdc, ID = 2.5 Adc)
gFS
2.5
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
800
pF
Output Capacitance
Coss
200
Reverse Transfer Capacitance
Crss
60
SWITCHING CHARACTERISTICS (1)
Turn−On Delay Time
(VDD = 200 Vdc, ID = 2.5 Apk,
RG = 15 Ω)
td(on)
30
ns
Rise Time
tr
30
Turn−Off Delay Time
td(off)
55
Fall Time
tf
30
Total Gate Charge
(VDS = 0.8 Rated VDSS,
VGS = 10 Vdc, ID = Rated ID)
Qg
22 (Typ)
30
nC
Gate−Source Charge
Qgs
12 (Typ)
Gate−Drain Charge
Qgd
10 (Typ)
SOURCE−DRAIN DIODE CHARACTERISTICS (1)
Forward On−Voltage
(IS = Rated ID,
VGS = 0)
VSD
1.1 (Typ)
1.6
Vdc
Forward Turn−On Time
ton
Limited by stray inductance
Reverse Recovery Time
trr
450 (Typ)
ns
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the contact screw on tab to center of die)
(Measured from the drain lead 0.25″ from package to center of die)
LD
3.5 (Typ)
4.5 (Typ)
nH
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
LS
7.5 (Typ)
(1) Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.


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