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LF411ACN Arkusz danych(PDF) 5 Page - Texas Instruments |
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LF411ACN Arkusz danych(HTML) 5 Page - Texas Instruments |
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5 / 21 page  LF411-N www.ti.com SNOSBH6E – APRIL 1998 – REVISED OCTOBER 2014 6.5 DC Electrical Characteristics (1) (2) LF411A LF411 PARAMETER TEST CONDITIONS UNIT MIN TYP MAX MIN TYP MAX VOS Input Offset Voltage RS=10 kΩ, TA=25°C 0.3 0.5 0.8 2.0 mV ΔVOS/ΔT Average TC of Input RS=10 kΩ 7 7 μV/°C Offset Voltage IOS Input Offset Current VS=±15V (2) (3) Tj=25°C 25 100 25 100 pA Tj=70°C 2 2 nA Tj=125°C 25 25 nA IB Input Bias Current VS=±15V (2) (3) Tj=25°C 50 200 50 200 pA Tj=70°C 4 4 nA Tj=125°C 50 50 nA RIN Input Resistance Tj=25°C 1012 1012 Ω AVOL Large Signal Voltage Gain VS=±15V, VO=±10V, RL=2k, 50 200 25 200 V/mV TA=25°C Over Temperature 25 200 15 200 V/mV VO Output Voltage Swing VS=±15V, RL=10k ±12 ±13.5 ±12 ±13.5 V VCM Input Common-Mode ±16 +19.5 ±11 +14.5 V Voltage Range −16.5 −11.5 V CMRR Common-Mode Rejection RS≤10k 80 100 70 100 dB Ratio PSRR Supply Voltage Rejection See (4) 80 100 70 100 dB Ratio IS Supply Current 1.8 2.8 1.8 3.4 mA (1) RETS 411X for LF411MH and LF411MJ military specifications. (2) Unless otherwise specified, the specifications apply over the full temperature range and for VS=±20V for the LF411A and for VS=±15V for the LF411. VOS, IB, and IOS are measured at VCM=0. (3) The input bias currents are junction leakage currents which approximately double for every 10°C increase in the junction temperature, Tj. Due to limited production test time, the input bias currents measured are correlated to junction temperature. In normal operation the junction temperature rises above the ambient temperature as a result of internal power dissipation, PD. Tj=TA+θjA PD where θjA is the thermal resistance from junction to ambient. Use of a heat sink is recommended if input bias current is to be kept to a minimum. (4) Supply voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously in accordance with common practice, from ±15V to ±5V for the LF411 and from ±20V to ±5V for the LF411A. 6.6 AC Electrical Characteristics LF411A LF411 PARAMETER(1)(2) TEST CONDITIONS UNIT MIN TYP MAX MIN TYP MAX SR Slew Rate VS=±15V, TA=25°C 10 15 8 15 V/ μs GBW Gain-Bandwidth Product VS=±15V, TA=25°C 3 4 2.7 4 MHz en Equivalent Input Noise Voltage TA=25°C, RS=100Ω, 25 25 nV / √Hz f=1 kHz in Equivalent Input Noise Current TA=25°C, f=1 kHz 0.01 0.01 pA / √Hz THD Total Harmonic Distortion AV=+10, RL=10k, VO=20 <0.02 <0.02 Vp-p, BW=20 Hz −20 kHz % % (1) Unless otherwise specified, the specifications apply over the full temperature range and for VS=±20V for the LF411A and for VS=±15V for the LF411. VOS, IB, and IOS are measured at VCM=0. (2) RETS 411X for LF411MH and LF411MJ military specifications. Copyright © 1998–2014, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Links: LF411-N |
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