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BD13910S Arkusz danych(PDF) 2 Page - Fairchild Semiconductor |
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BD13910S Arkusz danych(HTML) 2 Page - Fairchild Semiconductor |
2 / 5 page © 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com BD135 / 137 / 139 Rev. 1.2.0 2 Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted. Electrical Characteristics Values are at TC = 25°C unless otherwise noted. hFE Classification Symbol Parameter Value Units VCBO Collector-Base Voltage BD135 45 V BD137 60 BD139 80 VCEO Collector-Emitter Voltage BD135 45 V BD137 60 BD139 80 VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 1.5 A ICP Collector Current (Pulse) 3.0 A IB Base Current 0.5 A PC Device Dissipation TC = 25°C12.5 W TA = 25°C1.25 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 to +150 °C Symbol Parameter Test Condition Min. Typ. Max. Units VCEO(sus) Collector-Emitter Sustaining Voltage BD135 IC = 30 mA, IB = 0 45 V BD137 60 BD139 80 ICBO Collector Cut-off Current VCB = 30 V, IE = 0 0.1 μA IEBO Emitter Cut-off Current VEB = 5 V, IC = 0 10 μA hFE1 DC Current Gain VCE = 2 V, IC = 5 mA 25 hFE2 VCE = 2 V, IC = 0.5 A 25 hFE3 VCE = 2 V, IC = 150 mA 40 250 VCE(sat) Collector-Emitter Saturation Voltage IC = 500 mA, IB = 50 mA 0.5 V VBE(on) Base-Emitter On Voltage VCE = 2 V, IC = 0.5 A 1 V Classification 6 10 16 hFE3 40 ~ 100 63 ~ 160 100 ~ 250 |
Podobny numer części - BD13910S |
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Podobny opis - BD13910S |
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