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TPA6211A1DGNR Arkusz danych(PDF) 4 Page - Texas Instruments

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Numer części TPA6211A1DGNR
Szczegółowy opis  3.1-W Mono Fully Differential Audio Power Amplifier
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Producent  TI1 [Texas Instruments]
Strona internetowa  http://www.ti.com
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TPA6211A1
SLOS367E – AUGUST 2003 – REVISED NOVEMBER 2015
www.ti.com
7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range unless otherwise noted
(1)
MIN
MAX
UNIT
VD
Supply voltage
–0.3
6
V
D
VI
Input voltage
–0.3
VDD + 0.3
V
Continuous total power dissipation
See Dissipation Ratings
TA
Operating free-air temperature
–40
85
°C
TJ
Junction temperature
–40
150
°C
Tstg Storage temperature
–65
150
°C
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
7.2 ESD Ratings
VALUE
UNIT
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±4000
V(ESD)
Electrostatic discharge
V
Charged-device model (CDM), per JEDEC specification JESD22-
±1000
C101(2)
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operation Conditions
MIN
NOM
MAX
UNIT
VDD
Supply voltage
2.5
5.5
V
VIH
High-level input voltage
SHUTDOWN
1.55
V
VIL
Low-level input voltage
SHUTDOWN
0.5
V
TA
Operating free-air temperature
–40
85
°C
7.4 Thermal Information
TPA6211A1
DGN (MSOP-
DRB (SON)
THERMAL METRIC(1)
UNIT
PowerPAD™)
8 PINS
8 PINS
RθJA
Junction-to-ambient thermal resistance
62.8
49.2
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
61.9
24.8
°C/W
RθJB
Junction-to-board thermal resistance
42.1
58.8
°C/W
ψJT
Junction-to-top characterization parameter
3.3
1.7
°C/W
ψJB
Junction-to-board characterization parameter
41.9
25
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
11
8.4
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
7.5 Electrical Characteristics
TA = 25°C
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Output offset voltage (measured
VOS
VI = 0 V differential, Gain = 1 V/V, VDD = 5.5 V
-9
0.3
9
mV
differentially)
PSRR
Power supply rejection ratio
VDD = 2.5 V to 5.5 V
–85
–60
dB
VIC
Common mode input range
VDD = 2.5 V to 5.5 V
0.5
VDD-0.8
V
4
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