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CDCLVP2106 Arkusz danych(PDF) 6 Page - Texas Instruments

Numer części CDCLVP2106
Szczegółowy opis  12-LVPECL Output, High-Performance Clock Buffer
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CDCLVP2106
SCAS887B – SEPTEMBER 2009 – REVISED JANUARY 2016
www.ti.com
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN
MAX
UNIT
VCC
Supply voltage(2)
–0.5
4.6
V
VIN
Input voltage(3)
–0.5
VCC + 0.5
V
VOUT
Output voltage(3)
–0.5
VCC + 0.5
V
IIN
Input current
20
mA
IOUT
Output current
50
mA
TA
Specified free-air temperature (no airflow)
–40
85
°C
TJ
Maximum junction temperature
125
°C
Tstg
Storage temperature
–65
150
°C
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
All supply voltages must be supplied simultaneously.
(3)
The input and output negative voltage ratings may be exceeded if the input clamp-current and output clamp-current ratings are
observed.
6.2 ESD Ratings
VALUE
UNIT
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
2000
V(ESD)
Electrostatic discharge
V
Charged-device model (CDM), per JEDEC specification JESD22-
1000
C101(2)
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted).
MIN
NOM
MAX
UNIT
VCC
Supply voltage
2.375
2.5/3.3
3.60
V
TA
Ambient temperature
–40
85
°C
TPCB
PCB temperature (measured at thermal pad)
105
°C
6.4 Thermal Information
CDCLVP2106
THERMAL METRIC(1)(2)(3)
(RHA) VQFN
UNIT
40 PINS
RθJA
Junction-to-ambient thermal resistance(4)
0 LFM
34.7
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
23.7
°C/W
RθJB
Junction-to-board thermal resistance
10.1
°C/W
ψJT
Junction-to-top characterization parameter
0.5
°C/W
ψJB
Junction-to-board characterization parameter
10.0
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
3.8
°C/W
RθJP
Junction-to-pad thermal resistance(5)
3.58
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report (SPRA953).
(2)
The package thermal resistance is calculated in accordance with JESD 51 and JEDEC 2S2P (high-K board).
(3)
Connected to GND with 16 thermal vias (0.3-mm diameter).
(4)
4 × 4 vias on pad
(5)
RθJP (junction-to-pad) is used for the VQFN package, because the primary heat flow is from the junction to the GND pad of the VQFN
package.
6
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