BF2030W datasheet(2/6 Pages) INFINEON

Numer części	BF2030W

Szczegółowy opis	Silicon N-Channel MOSFET Tetrode

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Producent	INFINEON [Infineon Technologies AG]

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Apr-23-2004

2

BF2030...

Thermal Resistance

Parameter

Symbol

Value

Unit

Channel - soldering point1)

BF2030/ BF2030R

BF2030W

Rthchs

≤370

≤280

K/W

Electrical Characteristics

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics

Drain-source breakdown voltage

ID = 20 µA, VG1S = 0 , VG2S = 0

V(BR)DS

10

-

V

Gate1-source breakdown voltage

+IG1S = 10 mA, VG2S = 0 , VDS = 0

+V(BR)G1SS

6

-

15

Gate2-source breakdown voltage

+IG2S = 10 mA, VG1S = 0 , VDS = 0

+V(BR)G2SS

6

-

15

Gate1-source leakage current

VG1S = 5 V, VG2S = 0 , VDS = 0

+IG1SS

-

50

nA

Gate2-source leakage current

VG2S = 5 V, VG1S = 0 , VDS = 0

+IG2SS

-

50

Drain current

VDS = 5 V, VG1S = 0 , VG2S = 4 V

IDSS

-

50

µA

Drain-source current

VDS = 5 V, VG2S = 4 V, RG1 = 100 kΩ

IDSX

-

12

-

mA

Gate1-source pinch-off voltage

VDS = 5 V, VG2S = 4 V, ID = 20 µA

VG1S(p)

0.3

0.5

-

V

Gate2-source pinch-off voltage

VDS = 5 V, ID = 20 µA

VG2S(p)

0.3

0.6

-

1For calculation of RthJA please refer to Application Note Thermal Resistance

Podobny numer części - BF2030W

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Siemens Semiconductor G...	BF2030W	16Kb / 2P	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)
Infineon Technologies A...	BF2030W	118Kb / 11P	Silicon N-Channel MOSFET Tetrode 2007-04-20

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Infineon Technologies A...	BF1009S	251Kb / 5P	Silicon N-Channel MOSFET Tetrode Feb-18-2004
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	BF2040	210Kb / 11P	Silicon N-Channel MOSFET Tetrode 2007-06-01
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Siemens Semiconductor G...	BF2000	19Kb / 3P	Silicon N Channel MOSFET Tetrode
Infineon Technologies A...	BF1009SW	48Kb / 4P	Silicon N-Channel MOSFET Tetrode Jun-28-2001

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BF2030W Arkusz danych(PDF) 2 Page - Infineon Technologies AG

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