STB18N60DM2 datasheet(4/15 Pages) STMICROELECTRONICS

Numer części	STB18N60DM2

Szczegółowy opis	Fast-recovery body diode

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Electrical characteristics

STB18N60DM2

4/15

DocID027677 Rev 3

2

Electrical characteristics

(Tcase= 25 °C unless otherwise specified)

Table 5: Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0 V, ID = 1 mA

600

V

IDSS

Zero gate voltage drain

current

VGS = 0 V, VDS = 600 V

1.5

µA

VGS = 0 V, VDS = 600 V,

Tcase = 125 °C

100

µA

IGSS

Gate-body leakage

current

VDS = 0 V, VGS = ±25 V

±10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

3

4

5

V

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 6 A

0.260

0.295

Ω

Table 6: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0 V

-

800

-

pF

Coss

Output capacitance

-

40

-

Crss

Reverse transfer

capacitance

-

1.33

-

Coss eq.(1)

Equivalent output

capacitance

VDS = 0 to 480 V, f = 1 MHz,

VGS = 0 V

-

80

-

pF

RG

Intrinsic gate resistance

f = 1 MHz, ID = 0 A

-

5.6

-

Ω

Qg

Total gate charge

VDD = 480 V, ID = 12 A,

VGS = 10 V (see Figure 15: "Test

circuit for gate charge behavior")

-

20

-

nC

Qgs

Gate-source charge

-

5.2

-

Qgd

Gate-drain charge

-

8.5

-

Notes:

(1) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Table 7: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 300 V, ID = 6 A RG = 4.7

Ω,

VGS = 10 V (see Figure 14: "Test

circuit for resistive load switching

times" and Figure 19: "Switching time

waveform")

-

13.5

-

ns

tr

Rise time

-

8

-

td(off)

Turn-off-delay time

-

9.5

-

tf

Fall time

-

32.5

-

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