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STB80N4F6AG Arkusz danych(PDF) 1 Page - STMicroelectronics

Numer części STB80N4F6AG
Szczegółowy opis  High avalanche ruggedness
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB80N4F6AG Arkusz danych(HTML) 1 Page - STMicroelectronics

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November 2015
DocID027978 Rev 2
1/15
This is information on a product in full production.
www.st.com
STB80N4F6AG
Automotive-grade N-
Channel 40 V, 5.5 mΩ typ.,80 A
STripFET™ F6 Power MOSFET in a D²PAK package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
VDS
RDS(on) max.
ID
STB80N4F6AG
40 V
6 mΩ
80 A
Designed for automotive applications and
AEC-Q101 qualified
Very low on-resistance
Very low gate charge
High avalanche ruggedness
Low gate drive power loss
Applications
Switching applications
Description
This device is an N-channel Power MOSFET
developed using the STripFET™ F6 technology
with a new trench gate structure. The resulting
Power MOSFET exhibits very low RDS(on) in all
packages.
Table 1: Device summary
Order code
Marking
Package
Packaging
STB80N4F6AG
80N4F6
D²PAK
Tape and Reel
1
3
TAB
D2PAK
AM01475v1_Tab
D(2, TAB)
G(1)
S(3)


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