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DAC7562SDGST Arkusz danych(PDF) 5 Page - Texas Instruments

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Numer części DAC7562SDGST
Szczegółowy opis  Internal Reference
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Producent  TI1 [Texas Instruments]
Strona internetowa  http://www.ti.com
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DAC7562SDGST Arkusz danych(HTML) 5 Page - Texas Instruments

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DAC7562, DAC7563, DAC8162
DAC8163, DAC8562, DAC8563
www.ti.com
SLAS719E – AUGUST 2010 – REVISED JUNE 2015
7 Specifications
7.1 Absolute Maximum Ratings
(1)
Over operating ambient temperature range (unless otherwise noted).
MIN
MAX
UNIT
AVDD to GND
–0.3
6
V
CLR, DIN, LDAC, SCLK and SYNC input voltage to GND
–0.3
AVDD + 0.3
V
VOUT[A, B] to GND
–0.3
AVDD + 0.3
V
VREFIN/VREFOUT to GND
–0.3
AVDD + 0.3
V
Operating temperature range
–40
125
°C
Junction temperature, TJ
150
°C
Storage temperature, Tstg
–65
150
°C
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
7.2 ESD Ratings
VALUE
UNIT
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±1000
V(ESD)
Electrostatic discharge
V
Charged-device model (CDM), per JEDEC specification JESD22-
±500
C101(2)
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
over operating ambient temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
POWER SUPPLY
Supply voltage
AVDD to GND
2.7
5.5
V
DIGITAL INPUTS
Digital input voltage
CLR, DIN, LDAC, SCLK and SYNC
0
AVDD
V
REFERENCE INPUT
VREFIN
Reference input voltage
0
AVDD
V
TEMPERATURE RANGE
TA
Operating ambient temperature
–40
125
°C
7.4 Thermal Information
DAC756x, DAC816x, DAC856x
THERMAL METRIC
DSC (WSON)
DGS (VSSOP)
UNIT
10 PINS
10 PINS
RθJA
Junction-to-ambient thermal resistance
62.8
173.8
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
44.3
48.5
°C/W
RθJB
Junction-to-board thermal resistance
26.5
79.9
°C/W
ψJT
Junction-to-top characterization parameter
0.4
1.7
°C/W
ψJB
Junction-to-board characterization parameter
25.5
68.4
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
46.2
N/A
°C/W
Copyright © 2010–2015, Texas Instruments Incorporated
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