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STPS4S200UF Arkusz danych(PDF) 3 Page - STMicroelectronics |
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STPS4S200UF Arkusz danych(HTML) 3 Page - STMicroelectronics |
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3 / 13 page  DocID027021 Rev2 3/13 STPS4S200 Characteristics Figure 1. Average forward power dissipation versus average forward current Figure 2. Average forward current versus ambient temperature ( δ = 0.5) Figure 3. Relative variation of thermal impedance, junction to case, versus pulse duration (DPAK) Figure 4. Relative variation of thermal impedance, junction to lead versus pulse duration (SMBflat) Figure 5. Relative variation of thermal impedance, junction to lead, versus pulse duration (SMC) Figure 6. Reverse leakage current versus reverse voltage applied (typical values) |
Podobny numer części - STPS4S200UF |
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Podobny opis - STPS4S200UF |
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