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BTS660P Arkusz danych(PDF) 1 Page - Infineon Technologies AG |
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BTS660P Arkusz danych(HTML) 1 Page - Infineon Technologies AG |
1 / 16 page PROFET® Data Sheet BTS660P Infineon Technologies AG Page 1 2003-Oct-01 Smart Highside High Current Power Switch Reversave • Reverse battery protection by self turn on of power MOSFET Features • Overload protection • Current limitation • Short circuit protection • Over temperature protection • Over voltage protection (including load dump) • Clamp of negative voltage at output • Fast deenergizing of inductive loads 1) • Low ohmic inverse current operation • Diagnostic feedback with load current sense • Open load detection via current sense • Loss of V bb protection 2 ) • Electrostatic discharge (ESD) protection Application • Power switch with current sense diagnostic feedback for up to 48 V DC grounded loads • Most suitable for loads with high inrush current like lamps and motors; all types of resistive and inductive loads • Replaces electromechanical relays, fuses and discrete circuits General Description N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions. IN Charge pump Level shifter Rectifier Limit for unclamped ind. loads Gate protection Current limit 3 Overvoltage protection + Vbb PROFET OUT 4 & Tab 1,2,6,7 Load GND Load Output Voltage detection R IS IS 5 I IS I L VIS I IN Logic GND Voltage sensor Voltage source Current Sense Logic ESD Temperature sensor R bb V IN 1) With additional external diode. 2 ) Additional external diode required for energized inductive loads (see page 9). Product Summary Overvoltage protection Vbb(AZ) 70 V Output clamp VON(CL) 62 V Operating voltage Vbb(on) 5.0 ... 58 V On-state resistance RON 9 m Ω Load current (ISO) IL(ISO) 44 A Short circuit current limitation IL(SC) 90 A Current sense ratio IL : IIS 13 000 TO 220-7SMD 1 7 Standard 1 7 SMD |
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