PROFET® Data Sheet BTS660P

Infineon Technologies AG

Page 1

2003-Oct-01

Smart Highside High Current Power Switch

Reversave



• Reverse battery protection by self turn on of

power MOSFET

Features

• Overload protection

• Current limitation

• Short circuit protection

• Over temperature protection

• Over voltage protection (including load dump)

• Clamp of negative voltage at output

• Low ohmic inverse current operation

• Diagnostic feedback with load current sense

• Open load detection via current sense

• Loss of V

2

)

• Electrostatic discharge (ESD) protection

Application

• Power switch with current sense diagnostic

feedback for up to 48 V DC grounded loads

• Most suitable for loads with high inrush current

like lamps and motors; all types of resistive and

inductive loads

• Replaces electromechanical relays, fuses and discrete circuits

General Description

N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load

current sense, integrated in Smart SIPMOS

chip on chip technology. Providing embedded protective functions.

IN

Charge pump

Level shifter

Rectifier

Limit for

unclamped

ind. loads

Gate

protection

Current

limit

3

Overvoltage

protection

+ Vbb

PROFET



OUT

4 & Tab

1,2,6,7

Load GND

Load

Output

Voltage

detection

R

IS

IS

5

Logic GND

Voltage

sensor

Voltage

source

Current

Sense

Logic

ESD

Temperature

sensor

R bb

V

IN

With additional external diode.

2

)

Additional external diode required for energized inductive loads (see page 9).

Product Summary

Overvoltage protection

70

V

Output clamp

62

V

Operating voltage

5.0 ... 58

V

On-state resistance

9 m

Ω

Load current (ISO)

44

A

Short circuit current limitation

90

A

Current sense ratio

13 000

TO 220-7SMD

1

7

Standard

1

7

SMD