STGP10M65DF2 datasheet(1/18 Pages) STMICROELECTRONICS

Numer części	STGP10M65DF2

Szczegółowy opis	Trench gate field-stop IGBT, M series 650 V, 10 A low loss

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October 2015

DocID027352 Rev 4

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This is information on a product in full production.

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STGP10M65DF2

Trench gate field-stop IGBT, M series 650 V, 10 A low loss

Datasheet - production data

Figure 1: Internal schematic diagram

Features



6 µs of short-circuit withstand time



VCE(sat) = 1.55 V (typ.) @ IC = 10 A



Tight parameter distribution



Safer paralleling



Low thermal resistance



Soft and very fast recovery antiparallel diode

Applications



Motor control



UPS



PFC

Description

This device is an IGBT developed using an

advanced proprietary trench gate field-stop

structure. The device is part of the M series of

IGBTs, which represents an optimum

compromise in performance to maximize the

efficiency of inverter systems where low loss and

short-circuit capability are essential. Furthermore,

a positive VCE(sat) temperature coefficient and tight

parameter distribution result in safer paralleling

operation.

Table 1: Device summary

Order code

Marking

Package

Packing

STGP10M65DF2

G10M65DF2

TO-220

Tube

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	STGD4M65DF2	1Mb / 19P	Trench gate field-stop IGBT, M series 650 V, 4 A low loss
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