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STGWA30M65DF2 Arkusz danych(PDF) 6 Page - STMicroelectronics |
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STGWA30M65DF2 Arkusz danych(HTML) 6 Page - STMicroelectronics |
6 / 19 page Electrical characteristics STGW30M65DF2, STGWA30M65DF2 6/19 DocID027768 Rev 3 Table 7: Diode switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit trr Reverse recovery time IF = 30 A, VR = 400 V, VGE = 15 V (see Figure 29: " Test circuit for inductive load switching") di/dt = 1000 A/µs - 140 ns Qrr Reverse recovery charge - 880 nC Irrm Reverse recovery current - 17 A dIrr/dt Peak rate of fall of reverse recovery current during tb - 650 A/µs Err Reverse recovery energy - 115 µJ trr Reverse recovery time IF = 30 A, VR = 400 V, VGE = 15 V TJ = 175 °C (see Figure 29: " Test circuit for inductive load switching") di/dt = 1000 A/µs - 244 ns Qrr Reverse recovery charge - 2743 nC Irrm Reverse recovery current - 25 A dIrr/dt Peak rate of fall of reverse recovery current during tb - 220 A/µs Err Reverse recovery energy - 320 µJ 2.1 Electrical characteristics (curves) |
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