STY100NM60N datasheet(4/13 Pages) STMICROELECTRONICS

Numer części	STY100NM60N

Szczegółowy opis	Low input capacitance and gate charge

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Electrical characteristics

STY100NM60N

4/13

Doc ID 022225 Rev 2

2

Electrical characteristics

(TC = 25 °C unless otherwise specified).

Table 5.

On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

(VGS = 0)

ID = 1 mA

600

V

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 600 V

VDS = 600 V, TC=125 °C

10

150

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 25 V

±100

nA

VGS(th)

Gate threshold voltage VDS = VGS, ID = 250 µA

2

3

4

V

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 49 A

0.028

0.029

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 50 V, f = 1 MHz,

VGS = 0

-

9600

850

50

-

pF

Coss(eq)

(1)

1.

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDS

Equivalent output

capacitance

VDS = 0 to 480 V VGS = 0

-

1602

-

pF

RG

Intrinsic gate

resistance

f = 1 MHz open drain

-

1.3

-

Ω

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 480 V, ID = 98 A,

VGS = 10 V

(see Figure 15)

-

330

40

174

-

nC

Table 7.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 300 V, ID = 49 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 16) and

(see Figure 19)

-

45

52

372

81

-

ns

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