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SEMH4 Arkusz danych(PDF) 1 Page - Infineon Technologies AG |
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SEMH4 Arkusz danych(HTML) 1 Page - Infineon Technologies AG |
1 / 4 page SEMH4 Feb-25-2004 1 NPN Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver circuit • Two ( galvanic) internal isolated Transistors with good matching in one package • Built in bias resistor (R1=10kΩ) 1 3 6 5 4 2 EHA07265 6 54 3 2 1 C1 B2 E2 C2 B1 E1 TR1 TR2 R1 R1 Type Marking Pin Configuration Package SEMH4 WV 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 50 V Collector-base voltage VCBO 50 Emitter-base voltage VEBO 5 Input on Voltage Vi(on) 20 DC collector current IC 100 mA Total power dissipation , TS = 75 °C Ptot 250 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS ≤ 300 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance |
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