SMBTA42 datasheet(2/4 Pages) INFINEON

Numer części	SMBTA42

Szczegółowy opis	NPN Silicon Transistor for High Voltages

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Producent	INFINEON [Infineon Technologies AG]

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SMBTA42/MMBTA42

Feb-21-2003

2

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 1 mA, IB = 0

V(BR)CEO

300

-

V

Collector-base breakdown voltage

IC = 100 µA, IE = 0

V(BR)CBO

300

-

Emitter-base breakdown voltage

IE = 100 µA, IC = 0

V(BR)EBO

6

-

Collector cutoff current

VCB = 200 V, IE = 0

ICBO

-

100

nA

Collector cutoff current

VCB = 200 V, IE = 0 , TA = 150 °C

ICBO

-

20

µA

Emitter cutoff current

VEB = 3 V, IC = 0

IEBO

-

100

nA

DC current gain 1)

IC = 1 mA, VCE = 10 V

IC = 10 mA, VCE = 10 V

IC = 30 mA, VCE = 10 V

hFE

25

40

-

Collector-emitter saturation voltage1)

IC = 20 mA, IB = 2 mA

VCEsat

-

0.5

V

Base-emitter saturation voltage 1)

IC = 20 mA, IB = 2 mA

VBEsat

-

0.9

AC Characteristics

fT

50

Transition frequency

IC = 10 mA, VCE = 20 V, f = 100 MHz

-

MHz

4

pF

Collector-base capacitance

VCB = 20 V, f = 1 MHz

-

Ccb

-

1) Pulse test: t < 300

s; D < 2%

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