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SPI35N10 Arkusz danych(PDF) 7 Page - Infineon Technologies AG

Numer części SPI35N10
Szczegółowy opis  SIPMOS Power-Transistor
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Producent  INFINEON [Infineon Technologies AG]
Strona internetowa  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SPI35N10 Arkusz danych(HTML) 7 Page - Infineon Technologies AG

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2002-01-31
Page 7
Preliminary data
SPI35N10
SPP35N10,SPB35N10
11 Typ. avalanche energy
EAS = f (Tj)
par.: ID = 35 A , VDD = 25 V, RGS = 25

25
45
65
85
105
125
145
°C
185
Tj
0
30
60
90
120
150
180
210
mJ
270
12 Typ. gate charge
VGS = f (QGate)
parameter: ID = 35 A pulsed
0
10
20
30
40
50
60 nC
75
QGate
0
2
4
6
8
10
12
V
16
SPP35N10
0,8 V
DS max
DS max
V
0,2
13 Drain-source breakdown voltage
V(BR)DSS = f (Tj)
-60
-20
20
60
100
140
°C
200
Tj
90
92
94
96
98
100
102
104
106
108
110
112
114
V
120
SPP35N10


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