SPI07N60C3 datasheet(10/14 Pages) INFINEON

Numer części	SPI07N60C3

Szczegółowy opis	Cool MOS??Power Transistor

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Producent	INFINEON [Infineon Technologies AG]

Strona internetowa	http://www.infineon.com

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10 / 14 page

2004-04-07

Rev. 2.1

Page 10

SPP07N60C3, SPB07N60C3

SPI07N60C3, SPA07N60C3

21 Avalanche energy

EAS = f (Tj)

par.: ID = 5.5 A, VDD = 50 V

20

40

60

80

100

120

°C

160

Tj

0

20

40

60

80

100

120

140

160

180

200

220

mJ

260

23 Avalanche power losses

PAR = f (f )

parameter: EAR=0.5mJ

10

4

10

5

10

6

MHz

f

0

100

200

300

W

500

22 Drain-source breakdown voltage

V(BR)DSS = f (Tj)

-60

-20

20

60

100

°C

180

Tj

540

560

580

600

620

640

660

680

V

720

SPP07N60C3

24 Typ. capacitances

C = f (VDS)

parameter: VGS=0V, f=1 MHz

0

100

200

300

400

V

600

VDS

0

10

1

10

2

10

3

10

4

10

pF

Ciss

Coss

Crss

Podobny numer części - SPI07N60C3

Producent	Numer części	Arkusz danych	Szczegółowy opis
Infineon Technologies A...	SPI07N60C3	1Mb / 15P	New revolutionary high voltage technology Ultra low gate charge Rev. 3.1 2007-08-30
Infineon Technologies A...	SPI07N60C3	625Kb / 15P	New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated Rev. 3.2 2009-11-27
Inchange Semiconductor ...	SPI07N60C3	331Kb / 2P	isc N-Channel MOSFET Transistor

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SPI07N60C3 Arkusz danych(PDF) 10 Page - Infineon Technologies AG

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