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CSD18536KTTT Arkusz danych(PDF) 4 Page - Texas Instruments

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Numer części CSD18536KTTT
Szczegółowy opis  60 V N-Channel NexFET Power MOSFET
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Producent  TI1 [Texas Instruments]
Strona internetowa  http://www.ti.com
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CSD18536KTTT Arkusz danych(HTML) 4 Page - Texas Instruments

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VGS - Gate-to-Source Voltage (V)
1
1.5
2
2.5
3
3.5
4
0
25
50
75
100
125
150
175
200
D003
TC = 125°C
TC = 25°C
TC = -55°C
VDS - Drain-to-Source Voltage (V)
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0
25
50
75
100
125
150
175
200
D002
VGS = 6 V
VGS = 8 V
VGS = 10 V
4
CSD18536KTT
SLPS588 – MARCH 2016
www.ti.com
Product Folder Links: CSD18536KTT
Submit Documentation Feedback
Copyright © 2016, Texas Instruments Incorporated
5.3 Typical MOSFET Characteristics
(TA = 25°C unless otherwise stated)
Figure 1. Transient Thermal Impedance
Figure 2. Saturation Characteristics
VDS = 5 V
Figure 3. Transfer Characteristics


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