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ADG5412BF Arkusz danych(PDF) 6 Page - Analog Devices

Numer części ADG5412BF
Szczegółowy opis  Bidirectional Fault Protection and Detection, 10 ohm RON, Quad SPST Switches
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Strona internetowa  http://www.analog.com
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ADG5412BF Arkusz danych(HTML) 6 Page - Analog Devices

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ADG5412BF/ADG5413BF
Data Sheet
Rev. B | Page 6 of 28
Parameter
+25°C
−40°C to
+85°C
−40°C to
+125°C
Unit
Test Conditions/Comments
Output Voltage
High, VOH
2.0
V min
Low, VOL
0.8
V max
DYNAMIC CHARACTERISTICS1
tON
400
ns typ
RL = 300 Ω, CL = 35 pF
500
530
555
ns max
VS = 10 V, see Figure 47
tOFF
415
ns typ
RL = 300 Ω, CL = 35 pF
515
550
565
ns max
VS = 10 V, see Figure 47
Break-Before-Make Time Delay, tD
(ADG5413BF Only)
295
ns typ
RL = 300 Ω, CL = 35 pF
200
ns min
VS1 = VS2 = 10 V, see Figure 46
Overvoltage Response Time, tRESPONSE
370
ns typ
RL = 1 kΩ, CL = 2 pF, see Figure 41
480
500
515
ns max
Overvoltage Recovery Time, tRECOVERY
840
ns typ
RL = 1 kΩ, CL = 2 pF, see Figure 42
1200
1400
1700
ns max
Interrupt Flag Response Time, tDIGRESP
85
115
ns typ
CL = 10 pF, see Figure 43
Interrupt Flag Recovery Time, tDIGREC
60
85
μs typ
CL = 10 pF, see Figure 44
600
ns typ
CL = 10 pF, RPULLUP = 1 kΩ, see
Figure 45
Charge Injection, QINJ
−640
pC typ
VS = 0 V, RS = 0 Ω, CL = 1 nF, see
Figure 48
Off Isolation
−70
dB typ
RL = 50 Ω, CL = 5 pF, f = 1 MHz, see
Figure 35
Channel-to-Channel Crosstalk
−90
dB typ
RL = 50 Ω, CL = 5 pF, f = 1 MHz, see
Figure 36
Total Harmonic Distortion Plus Noise, THD + N
0.001
% typ
RL = 10 kΩ, VS = 20 V p-p, f = 20 Hz
to 20 kHz, see Figure 40
−3 dB Bandwidth
270
MHz typ
RL = 50 Ω, CL = 5 pF, see Figure 39
Insertion Loss
−0.73
dB typ
RL = 50 Ω, CL = 5 pF, f = 1 MHz, see
Figure 39
CS (Off )
12
pF typ
VS = 0 V, f = 1 MHz
CD (Off )
11
pF typ
VS = 0 V, f = 1 MHz
CD (On), CS (On)
23
pF typ
VS = 0 V, f = 1 MHz
POWER REQUIREMENTS
VDD = 22 V, VSS = −22 V, digital
inputs = 0 V, 5 V, or VDD
Normal Mode
IDD
0.9
mA typ
1.2
1.3
mA max
IGND
0.4
mA typ
0.55
0.6
mA max
ISS
0.5
mA typ
0.65
0.7
mA max
Fault Mode
VS = ±55 V
IDD
1.2
mA typ
1.6
1.8
mA max
IGND
0.8
mA typ
1.0
1.1
mA max
ISS
0.5
mA typ
1.0
1.8
mA max
VDD/VSS
±5
V min
GND = 0 V
±22
V max
GND = 0 V
1 Guaranteed by design; not subject to production test.


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