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CSD13383F4T Arkusz danych(PDF) 3 Page - Texas Instruments |
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CSD13383F4T Arkusz danych(HTML) 3 Page - Texas Instruments |
3 / 13 page 3 CSD13383F4 www.ti.com SLPS517A – DECEMBER 2014 – REVISED JANUARY 2016 Product Folder Links: CSD13383F4 Submit Documentation Feedback Copyright © 2014–2016, Texas Instruments Incorporated 5 Specifications 5.1 Electrical Characteristics (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-source voltage VGS = 0 V, IDS = 250 μA 12 V IDSS Drain-to-source leakage current VGS = 0 V, VDS = 9.6 V 1 µA IGSS Gate-to-source leakage current VDS = 0 V, VGS = 10 V 10 µA VGS(th) Gate-to-source threshold voltage VDS = VGS, IDS = 250 μA 0.70 1.00 1.25 V RDS(on) Drain-to-source on-resistance VGS = 2.5 V, IDS =0.5 A 53 65 m Ω VGS = 4.5 V, IDS =0.5 A 37 44 m Ω gfs Transconductance VDS = 6 V, IDS = 0.5 A 5.4 S DYNAMIC CHARACTERISTICS Ciss Input capacitance VGS = 0 V, VDS = 6 V, ƒ = 1 MHz 224 291 pF Coss Output capacitance 68 88 pF Crss Reverse transfer capacitance 47 61 pF RG Series gate resistance 240 Ω Qg Gate charge total (4.5 V) VDS = 6 V, IDS = 0.5 A 2.0 2.6 nC Qgd Gate charge gate-to-drain 0.6 nC Qgs Gate charge gate-to-source 0.4 nC Qg(th) Gate charge at Vth 0.1 nC Qoss Output charge VDS = 6 V, VGS = 0 V 0.9 nC td(on) Turn on delay time VDS = 6 V, VGS = 4.5 V, IDS = 0.5 A, RG = 2 Ω 46 ns tr Rise time 122 ns td(off) Turn off delay time 250 ns tf Fall time 290 ns DIODE CHARACTERISTICS VSD Diode forward voltage ISD = 0.5 A, VGS = 0 V 0.7 1.0 V (1) Device mounted on FR4 material with 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu. (2) Device mounted on FR4 material with minimum Cu mounting area. 5.2 Thermal Information (TA = 25°C unless otherwise stated) THERMAL METRIC MIN TYP MAX UNIT RθJA Junction-to-ambient thermal resistance(1) 90 °C/W Junction-to-ambient thermal resistance(2) 250 |
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Podobny opis - CSD13383F4T |
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