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LM3485Q1MM Arkusz danych(PDF) 4 Page - Texas Instruments |
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LM3485Q1MM Arkusz danych(HTML) 4 Page - Texas Instruments |
4 / 28 page LM3485 SNVS178H – JANUARY 2002 – REVISED DECEMBER 2015 www.ti.com 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN TYP MAX UNIT PGATE voltage −0.3 36 V FB voltage −0.3 5 V ISENSE voltage −1.0 36 V ADJ voltage −0.3 36 V Maximum junction temperature 150 °C Power dissipation (at TA = 25°C) 417 mW Lead temperature Vapor phase (60 sec.) 215 °C Infrared (15 sec.) 220 °C Storage temperature, Tstg −65 160 °C (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions . Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. 6.3 Recommended Operating Conditions MIN NOM MAX UNIT Supply voltage 4.5 35 V TJ Operating junction temperature −40 125 °C 6.4 Thermal Information LM3485 THERMAL METRIC(1) DGK (VSSOP) UNIT 8 PINS RθJA Junction-to-ambient thermal resistance 163.3 °C/W RθJC(top) Junction-to-case (top) thermal resistance 56.7 °C/W RθJB Junction-to-board thermal resistance 83.2 °C/W ψJT Junction-to-top characterization parameter 5.9 °C/W ψJB Junction-to-board characterization parameter 81.9 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. 4 Submit Documentation Feedback Copyright © 2002–2015, Texas Instruments Incorporated Product Folder Links: LM3485 |
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