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CSD18532NQ5B Arkusz danych(PDF) 5 Page - Texas Instruments

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Numer części CSD18532NQ5B
Szczegółowy opis  N-Channel NexFET Power MOSFET
Download  15 Pages
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Producent  TI1 [Texas Instruments]
Strona internetowa  http://www.ti.com
Logo TI1 - Texas Instruments

CSD18532NQ5B Arkusz danych(HTML) 5 Page - Texas Instruments

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TC - Case Temperature (°C)
-75
-50
-25
0
25
50
75
100
125
150
175
1.8
2
2.2
2.4
2.6
2.8
3
3.2
3.4
D006
VGS - Gate-to-Source Voltage (V)
0
2
4
6
8
10
12
14
16
18
20
0
2
4
6
8
10
12
14
D007
TC = 25°C, I D = 25 A
TC = 125°C, I D = 25 A
Qg - Gate Charge (nC)
0
5
10
15
20
25
30
35
40
45
50
0
1
2
3
4
5
6
7
8
9
10
D004
VDS - Drain-to-Source Voltage (V)
0
5
10
15
20
25
30
10
100
1000
10000
100000
D005
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
VDS - Drain-to-Source Voltage (V)
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
20
40
60
80
100
120
140
160
180
200
D002
VGS = 6 V
VGS = 8 V
VGS = 10 V
VGS - Gate-to-Source Voltage (V)
1
2
3
4
5
6
7
8
0
20
40
60
80
100
120
140
160
180
200
D003
TC = 125°C
TC = 25°C
TC = -55°C
CSD18532NQ5B
www.ti.com
SLPS440A – JUNE 2013 – REVISED DECEMBER 2015
Typical MOSFET Characteristics (continued)
(TA = 25°C unless otherwise stated)
VDS = 5 V
Figure 2. Saturation Characteristics
Figure 3. Transfer Characteristics
ID = 25 A
VDS = 30 V
Figure 4. Gate Charge
Figure 5. Capacitance
ID = 250 µA
Figure 6. Threshold Voltage vs Temperature
Figure 7. On-State Resistance vs Gate-to-Source Voltage
Copyright © 2013–2015, Texas Instruments Incorporated
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