Reverse Voltage: 100 Volts

Forward Current: 10 Amp

RoHS Device

Features

-Low power loss, High efficiency.

-High current capability, low VF.

Mechanical data

-Case: Packed with FRP substrate and epoxy underfilled.

-Terminals: Pure Tin plated (Lead-Free),

solderable per MIL-STD-750, method 2026.

CDBZ310100LL-HF

V

V

0.68

100

°C

Operating and storage temperature range

Peak

surge

forward

current (8.3ms single half sine-wave)

Parameter

Symbol

Rating

Unit

mA

0.03

0.62

Repetitive peak reverse current

Forward voltage

Parameter

Conditions

Min.

Typ.

Max.

Unit

0.57

A

180

A

10

Average forward current

Repetitive peak reverse voltage

°C/W

Thermal resistance

Junction to ambient (NOTE)

105.5

-55 to +150

Symbol

V

0.515

-Lead less chip form, no lead damage.

Halogen free

-Plastic package has Underwriters Laboratory

Flammability Classification 94V-0 .

°C/W

Junction to case (NOTE)

3.9

0.455

0.63

6

0.01

-

0.15

30

mA

NOTES : Mounted on P.C.B. with 3.36 x 14.86mm & 1.39 x 1.40mm copper pad areas.

Dimensions in inches and (millimeter)

TO-277(Z3)

Dimensions in inches and (millimeter)

0.085(2.15)

0.073(1.85)

Top View

Bottom View

0.163(4.15)

0.152(3.85)

0.187(4.75)

0.175(4.45)

0.132(3.35)

0.120(3.05)

0.061(1.55)

0.049(1.25)

0.047(1.20)

0.035(0.90)

0.045(1.15)

0.033(0.85)

0.053(1.35)

0.041(1.05)

0.262(6.65)

0.250(6.35)

Circuit Diagram

LEFT PIN

RIGHT PIN

BOTTOMSIDE

HEAT SINK

Junction capacitance

pF

VR = 4V, f = 1.0 MHz

1100

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

QW-JL035

Comchip Technology CO., LTD.

Page 1

REV:A

Company reserves the right to improve product design , functions and reliability without notice.