TLP293-4

2015-10-21

3

Characteristic

Symbol

Note

Rating

Unit

Input forward current

50

mA

Input forward current derating (Ta

≥50°C)

−0.59

mA /°C

Input forward current(Pulsed)

(Note 1)

1

A

Power dissipation

70

mW

Power dissipation derating(Ta

≥50°C)

-0.82

mW /°C

Input reverse voltage

5

V

Junction temperature

125

°C

Collector-emitter voltage

80

V

Emitter-collector voltage

7

V

Collector current

50

mA

Collector power dissipation

(1 Circuit)

100

mW

Collector power dissipation derating(Ta

≥25°C)

(1 Circuit)

−0.91

mW /°C

Junction temperature

125

°C

Operating temperature range

−55 to 125

°C

Storage temperature range

−55 to 125

°C

Lead soldering temperature

260 (10s)

°C

Total power dissipation (1 Circuit)

170

mW

Input power dissipation derating(Ta

≥25°C) (1 Circuit)

−1.55

mW /°C

Isolation Voltage

AC, 60s, R.H.

≤60%

(Note 2)

3750

Vrms

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note1: Pulse width

≤ 100 μs, frequency 100 Hz

Note2: This device is considered as a two-terminal device: All pins on the LED side are shorted together,

and all pin on the photodetector side are shorted together.

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN

TYP.

MAX

UNIT

Input forward voltage

1.1

1.25

1.4

V

Input reverse current

—

—

10

μA

Input capacitance

V = 0 V, f = 1 MHz

—

30

—

pF

Collector-emitter breakdown voltage

80

—

—

V

Emitter-collector breakdown voltage

7

—

—

V

Dark current

—

0.01

0.08

μA

—

2

50

μA

Collector-emitter capacitance

V = 0 V, f = 1 MHz

—

10

—

pF