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TIP32A Arkusz danych(PDF) 1 Page - Diotec Semiconductor

Numer części TIP32A
Szczegółowy opis  Si-Epitaxial PlanarTransistors
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Producent  DIOTEC [Diotec Semiconductor]
Strona internetowa  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

TIP32A Arkusz danych(HTML) 1 Page - Diotec Semiconductor

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1) Valid, if leads are kept at ambient temperature at a distance of 5 mm from case
Gültig, wenn die Anschlußdrähte in 5 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
28
TIP32, TIP32A ... C
General Purpose Transistors
PNP
Si-Epitaxial PlanarTransistors
PNP
Version 2004-06-29
Collector current – Kollektorstrom
3 A
Plastic case
TO-220AB
Kunststoffgehäuse
Weight approx. – Gewicht ca.
2.2 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
1 = B
2 = C
3 = E
Standard packaging in tubes
Standard Lieferform in Stangen
Maximum ratings (T
A = 25°C)
Grenzwerte (T
A = 25°C)
TIP32
TIP32A
TIP32B
TIP32C
Collector-Emitter-voltage
B open
- V
CE0
40 V
60 V
80 V
100 V
Collector-Emitter-voltage
B shorted - V
CES
40 V
60 V
80 V
100 V
Emitter-Base-voltage
C open
- V
EB0
5 V
Power dissipation – Verlustleistung
without cooling – ohne Kühlung
P
tot
2 W
1)
with cooling – mit Kühlung
T
C =25°C
P
tot
40 W
Collector current – Kollektorstrom
- I
C
3 A (dc)
Peak Collector current
Kollektor-Spitzenstrom
- I
CM
5 A
Base current – Basisstrom
- I
B
1 A
Junction temp. – Sperrschichttemp.
T
j
150°C
Storage temp. – Lagerungstemperatur
T
S
- 65…+ 150°C
Characteristics, T
j = 25°C
Kennwerte, T
j = 25°C
Min.
Typ.
Max.
Collector saturation volt. – Kollektor-Sättigungsspannung
- I
C = 3 A, - IB = 375 mA
- V
CEsat
1.2 V
Base-Emitter voltage – Basis-Emitter-Spannung
- V
CE = 4 V, - IC = 3 A
- V
BEon
1.8
DC current gain – Kollektor-Basis-Stromverhältnis
- V
CE = 4 V, - IC = 1 A
- V
CE = 4 V, - IC = 3 A
h
FE
h
FE
25
10
50


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