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1N4448 Arkusz danych(PDF) 2 Page - Diotec Semiconductor |
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1N4448 Arkusz danych(HTML) 2 Page - Diotec Semiconductor |
2 / 2 page 1)I F = 10 mA über / through IR = 10 mA bis / to IR = 1 mA, UR = 6 V, RL = 100 S 2) Valid, if leads are kept at T A = 25/C at a distance of 5 mm from case Gültig, wenn die Anschlußdrähte in 5 mm Abstand von Gehäuse auf T A = 25/C gehalten werden 35 01.10.2002 1N 4148, 1N 4150, 1N 4151, 1N 4448 Characteristics, T j = 25/C Kennwerte, T j = 25/C Type Typ Forward voltage Durchlaßspannung Leakage current Sperrstrom Rev. recovery time 1) Sperrverzugszeit 1) V F [V] I F [mA] I R [nA] V R [V] t rr [ns] 1N 4148 < 1 10 < 25 < 5.000 < 50.000 20 75 20 (T j = 150/C) < 4 1N 4150 0.54...0.62 0.66...0.74 0.76...0.86 0.82...0.92 0.87...1.00 1 10 50 100 200 < 100 < 100.000 50 50 (T j = 150/C) < 4 1N 4151 < 1 50 < 50 < 50.000 50 50 (T j = 150/C) < 2 1N 4448 0.62...0.72 < 1 5 100 < 20 < 5.000 < 50.000 25 75 20 (T j = 150/C) < 4 Thermal resistance junction to ambient air R thA < 0.3 K/mW 2) Wärmewiderstand Sperrschicht – umgebende Luft |
Podobny numer części - 1N4448 |
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Podobny opis - 1N4448 |
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