BC549 datasheet(1/2 Pages) DIOTEC

Numer części	BC549

Szczegółowy opis	Si-Epitaxial PlanarTransistors

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1) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case

Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden

6

01.11.2003

BC 546 ... BC 549

General Purpose Transistors

NPN

Si-Epitaxial PlanarTransistors

NPN

Power dissipation – Verlustleistung

500 mW

Plastic case

TO-92

Kunststoffgehäuse

(10D3)

Weight approx. – Gewicht ca.

0.18 g

Plastic material has UL classification 94V-0

Gehäusematerial UL94V-0 klassifiziert

Standard Pinning

1 = C 2 = B 3 = E

Standard packaging taped in ammo pack

Standard Lieferform gegurtet in Ammo-Pack

Maximum ratings (T

A = 25

/C)

Grenzwerte (T

A = 25

/C)

BC 546

BC 547

BC 548/549

Collector-Emitter-voltage

B open

V

CE0

65 V

45 V

30 V

Collector-Emitter-voltage

B shorted

V

CES

85 V

50 V

30 V

Collector-Base-voltage

E open

V

CB0

80 V

50 V

30 V

Emitter-Base-voltage

C open

V

EB0

6 V

5 V

Power dissipation – Verlustleistung

P

tot

500 mW 1)

Collector current – Kollektorstrom (DC)

I

C

100 mA

Peak Coll. current – Kollektor-Spitzenstrom

I

CM

200 mA

Peak Base current – Basis-Spitzenstrom

I

BM

200 mA

Peak Emitter current – Emitter-Spitzenstrom

- I

EM

200 mA

Junction temp. – Sperrschichttemperatur

T

j

150

/C

Storage temperature – Lagerungstemperatur

T

S

- 65…+ 150

/C

Characteristics, T

j = 25

/C

Kennwerte, T

j = 25

/C

Group A

Group B

Group C

DC current gain – Kollektor-Basis-Stromverhältnis

V

CE = 5 V, IC = 10

:Ah

FE

typ. 90

typ. 150

typ. 270

V

CE = 5 V, IC = 2 mA

h

FE

110...220

200...450

420...800

V

CE = 5 V, IC = 100 mA

h

FE

typ. 120

typ. 200

typ.400

h-Parameters at V

CE = 5V, IC = 2 mA, f = 1 kHz

Small signal current gain – Stromverst.

h

fe

typ. 220

typ. 330

typ. 600

Input impedance – Eingangsimpedanz

h

ie

1.6...4.5 k

S

3.2...8.5 k

S

6...15 k

S

Output admittance – Ausgangsleitwert

h

oe

18 < 30

:S

30 < 60

:S

60 < 110

:S

Reverse voltage transfer ratio

Spannungsrückwirkung

h

re

typ.1.5 *10-4

typ. 2 *10-4

typ. 3 *10-4

Podobny numer części - BC549

Producent	Numer części	Arkusz danych	Szczegółowy opis
NXP Semiconductors	BC549	44Kb / 8P	NPN general purpose transistors 1999 Apr 22
NXP Semiconductors	BC549	248Kb / 7P	NPN general purpose transistors 2004 Oct 11
ARTSCHIP ELECTRONICS CO...	BC549	179Kb / 3P	NPN Epitaxial Silicon Transistor
Semtech Corporation	BC549	371Kb / 5P	NPN Silicon Epitaxial Planar Transistor
KEC(Korea Electronics)	BC549	34Kb / 1P	EPITAXIAL PLANAR NPN TRANSISTOR

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Podobny opis - BC549

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Diotec Semiconductor	BC556	144Kb / 2P	Si-Epitaxial PlanarTransistors
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	2N3905	99Kb / 2P	Si-Epitaxial PlanarTransistors
	TIP31	36Kb / 2P	Si-Epitaxial PlanarTransistors
	TIP32	36Kb / 2P	Si-Epitaxial PlanarTransistors

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