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BCW68 Arkusz danych(PDF) 2 Page - Diotec Semiconductor

Numer części BCW68
Szczegółowy opis  Surface mount Si-Epitaxial PlanarTransistors
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Producent  DIOTEC [Diotec Semiconductor]
Strona internetowa  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

BCW68 Arkusz danych(HTML) 2 Page - Diotec Semiconductor

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1) Tested with pulses t
p = 300
:s, duty cycle # 2% – Gemessen mit Impulsen t
p = 300
:s, Schaltverhältnis # 2%
2) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
45
01.11.2003
General Purpose Transistors
BCW 67, BCW 68
Characteristics (T
j = 25
/C)
Kennwerte (T
j = 25
/C)
Min.
Typ.
Max.
Collector saturation volt. – Kollektor-Sättigungsspg. 1)
- I
C = 100 mA, - IB = 10 mA
- V
CEsat
300 mV
- I
C = 500 mA, - IB = 50 mA
- V
CEsat
700 mV
Base saturation voltage – Basis-Sättigungsspannung 1)
- I
C = 100 mA, - IB = 10 mA
- V
BEsat
1.25 V
- I
C = 500 mA, - IB = 50 mA
- V
BEsat
2 V
DC current gain – Kollektor-Basis-Stromverhältnis 1)
- V
CE = 10 V
- I
C = 100
: mA
BCW 67A / 68F
h
FE
35
BCW 67B / 68G
h
FE
50
BCW 67C / 68H
h
FE
80
- V
CE = 1 V
- I
C = 10 mA
BCW 67A / 68F
h
FE
75
BCW 67B / 68G
h
FE
120
BCW 67C / 68H
h
FE
180
- V
CE = 1 V
- I
C = 100 mA
BCW 67A / 68F
h
FE
100
160
250
BCW 67B / 68G
h
FE
160
250
400
BCW 67C / 68H
h
FE
250
350
630
- V
CE = 2 V
- I
C = 500 mA
BCW 67A / 68F
h
FE
35
BCW 67B / 68G
h
FE
60
BCW 67C / 68H
h
FE
100
Gain-Bandwidth Product – Transitfrequenz
- V
CE = 5 V, - IC = 50 mA, f = 100 MHz
f
T
200 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- V
CB = 10 V, IE = ie = 0, f = 1 MHz
C
CB0
6 pF
Emitter-Base Capacitance – Emitter-Basis-Kapazität
- V
EB = 0.5 V, IC = ic = 0, f = 1 MHz
C
EB0
60 pF
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
R
thA
420 K/W 2)
Recommended complementary NPN-transistors
Empfohlene komplementäre NPN-Transistoren
BCW 65, BCW 66
Marking – Stempelung
BCW 67A = DA
BCW 67B = DB
BCW 67C = DC
BCW 68F = DF
BCW 68G = DG
BCW 68H = DH


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