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BCW68 Arkusz danych(PDF) 2 Page - Diotec Semiconductor |
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BCW68 Arkusz danych(HTML) 2 Page - Diotec Semiconductor |
2 / 2 page 1) Tested with pulses t p = 300 :s, duty cycle # 2% – Gemessen mit Impulsen t p = 300 :s, Schaltverhältnis # 2% 2) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 45 01.11.2003 General Purpose Transistors BCW 67, BCW 68 Characteristics (T j = 25 /C) Kennwerte (T j = 25 /C) Min. Typ. Max. Collector saturation volt. – Kollektor-Sättigungsspg. 1) - I C = 100 mA, - IB = 10 mA - V CEsat – – 300 mV - I C = 500 mA, - IB = 50 mA - V CEsat – – 700 mV Base saturation voltage – Basis-Sättigungsspannung 1) - I C = 100 mA, - IB = 10 mA - V BEsat – – 1.25 V - I C = 500 mA, - IB = 50 mA - V BEsat – – 2 V DC current gain – Kollektor-Basis-Stromverhältnis 1) - V CE = 10 V - I C = 100 : mA BCW 67A / 68F h FE 35 – – BCW 67B / 68G h FE 50 – – BCW 67C / 68H h FE 80 – – - V CE = 1 V - I C = 10 mA BCW 67A / 68F h FE 75 – – BCW 67B / 68G h FE 120 – – BCW 67C / 68H h FE 180 – – - V CE = 1 V - I C = 100 mA BCW 67A / 68F h FE 100 160 250 BCW 67B / 68G h FE 160 250 400 BCW 67C / 68H h FE 250 350 630 - V CE = 2 V - I C = 500 mA BCW 67A / 68F h FE 35 – – BCW 67B / 68G h FE 60 – – BCW 67C / 68H h FE 100 – – Gain-Bandwidth Product – Transitfrequenz - V CE = 5 V, - IC = 50 mA, f = 100 MHz f T – 200 MHz – Collector-Base Capacitance – Kollektor-Basis-Kapazität - V CB = 10 V, IE = ie = 0, f = 1 MHz C CB0 – 6 pF – Emitter-Base Capacitance – Emitter-Basis-Kapazität - V EB = 0.5 V, IC = ic = 0, f = 1 MHz C EB0 – 60 pF – Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft R thA 420 K/W 2) Recommended complementary NPN-transistors Empfohlene komplementäre NPN-Transistoren BCW 65, BCW 66 Marking – Stempelung BCW 67A = DA BCW 67B = DB BCW 67C = DC BCW 68F = DF BCW 68G = DG BCW 68H = DH |
Podobny numer części - BCW68 |
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Podobny opis - BCW68 |
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