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BYP35K1 Arkusz danych(PDF) 1 Page - Diotec Semiconductor

Numer części BYP35K1
Szczegółowy opis  Silicon Press-Fit-Diodes
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Producent  DIOTEC [Diotec Semiconductor]
Strona internetowa  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

BYP35K1 Arkusz danych(HTML) 1 Page - Diotec Semiconductor

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1) Max. case temperature T
C = 150
/C – Max. Gehäusetemperatur T
C = 150
/C
78
28.02.2002
BYP 35A05 ... BYP 35A6
BYP 35K05 ... BYP 35K6
Silicon Press-Fit-Diodes
Silizium-Einpreßdioden
High-temperature diodes
Hochtemperaturdioden
Nominal current – Nennstrom
35 A
Repetitive peak reverse voltage
50…600 V
Periodische Spitzensperrspannung
Metal press-fit case with plastic cover
Metall-Einpreßgehäuse mit Plastik-Abdeckung
Weight approx. – Gewicht ca.
10 g
Casting compound has UL classification 94V-0
Vergußmasse UL94V-0 klassifiziert
Dimensions / Maße in mm
Standard packaging: bulk
Standard Lieferform: lose im Karton
Maximum ratings
Grenzwerte
Type / Typ
Wire to / Draht an
Anode
Cathode
Repetitive peak reverse voltage
Periodische Spitzensperrspanng.
V
RRM [V]
Surge peak reverse voltage
Stoßspitzensperrspannung
V
RSM [V]
BYP 35A05
BYP 35K05
50
60
BYP 35A1
BYP 35K1
100
120
BYP 35A2
BYP 35K2
200
240
BYP 35A3
BYP 35K3
300
360
BYP 35A4
BYP 35K4
400
480
BYP 35A6
BYP 35K6
600
700
Max. average forward rectified current, R-load
T
C = 150
/CI
FAV
35 A
Dauergrenzstrom in Einwegschaltung mit R-Last
Repetitive peak forward current
f > 15 Hz
I
FRM
110 A 1)
Periodischer Spitzenstrom
Peak forward surge current, 50 / 60 Hz half sine-wave
T
A = 25
/CI
FSM
360 / 400 A
Stoßstrom für eine 50 / 60 Hz Sinus-Halbwelle
Rating for fusing – Grenzlastintegral, t <10 ms
T
A = 25
/Ci2t
660 A2s
Operating junction temperature – Sperrschichttemperatur
T
j
– 50...+215
/C
Storage temperature – Lagerungstemperatur
T
S
– 50...+215
/C
Maximum pressure – Maximaler Einpreßdruck
7 kN


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