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MTB020N03KJ3-0-T3-G Arkusz danych(PDF) 2 Page - Cystech Electonics Corp. |
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MTB020N03KJ3-0-T3-G Arkusz danych(HTML) 2 Page - Cystech Electonics Corp. |
2 / 9 page CYStech Electronics Corp. Spec. No. : C143J3 Issued Date : 2015.12.15 Revised Date : 2016.02.22 Page No. : 2/9 MTB020N03KJ3 CYStek Product Specification Absolute Maximum Ratings (TC=25C) Parameter Symbol Limits Unit Drain-Source Voltage (Note 1) VDS 30 V Gate-Source Voltage VGS ±20 Continuous Drain Current @TC=25C, VGS=10V (Note 1) ID 30 A Continuous Drain Current @TC=100C, VGS=10V (Note 1) 19 Continuous Drain Current @TA=25C, VGS=10V (Note 2) IDSM 9 Continuous Drain Current @TA=100C, VGS=10V (Note 2) 5.7 Pulsed Drain Current @ VGS=10V (Note 3) IDM 100 Single Pulse Avalanche Current @ L=0.1mH IAS 21 Single Pulse Avalanche Energy @ L=5mH, ID=6A, VDD=15V (Note 4) EAS 90 mJ Power Dissipation TC=25C (Note 1) PD 50 W TC=100C (Note 1) 20 TA=25C (Note 2) PDSM 2.5 TA=100C (Note 2) 1.0 Operating Junction and Storage Temperature Tj, Tstg -55~+150 C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max RθJC 2.5 C/W Thermal Resistance, Junction-to-ambient, max (Note 2) RθJA 50 Note : 1 .The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2 .The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. 3 . Pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 4. 100% tested by conditions of L=100μH, IAS=10A, VGS=10V, VDD=15V |
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