Zakładka z wyszukiwarką danych komponentów |
|
MTB020N03KN6-0-T1-G Arkusz danych(PDF) 6 Page - Cystech Electonics Corp. |
|
MTB020N03KN6-0-T1-G Arkusz danych(HTML) 6 Page - Cystech Electonics Corp. |
6 / 9 page CYStech Electronics Corp. Spec. No. : C143N6 Issued Date : 2016.01.06 Revised Date : 2016.02.22 Page No. : 6/9 MTB020N03KN6 CYStek Product Specification Typical Characteristics(Cont.) Typical Transfer Characteristics 0 5 10 15 20 25 30 35 40 01 2 3 45 VGS, Gate-Source Voltage(V) VDS=10V Single Pulse Power Rating, Junction to Ambient (Note on page 2) 0 10 20 30 40 50 0.01 0.1 1 10 100 1000 Pulse Width(s) TJ(MAX)=150°C TA=25°C RθJA=62.5°C/W Power Derating Curve 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 0 20 40 60 80 100 120 140 160 TA, Ambient Temperature(℃) Mounted on FR-4 board with 1 in² pad area Power Derating Curve 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4 0 20 40 60 80 100 120 140 160 TC, Case Temperature(℃) Transient Thermal Response Curves 0.001 0.01 0.1 1 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 t1, Square Wave Pulse Duration(s) Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=62.5°C/W |
Podobny numer części - MTB020N03KN6-0-T1-G |
|
Podobny opis - MTB020N03KN6-0-T1-G |
|
|
Link URL |
Polityka prywatności |
ALLDATASHEET.PL |
Czy Alldatasheet okazała się pomocna? [ DONATE ] |
O Alldatasheet | Reklama | Kontakt | Polityka prywatności | Linki | Lista producentów All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |