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TS8P04G Arkusz danych(PDF) 1 Page - Taiwan Memory Technology |
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TS8P04G Arkusz danych(HTML) 1 Page - Taiwan Memory Technology |
1 / 4 page TS8P01G - TS8P07G CREAT BY ART - Glass passivated junction - Ideal for printed circuit board - Typical IR less than 0.1μA - High surge current capability - UL Recognized File # E-326243 - Halogen-free according to IEC 61249-2-21 Molding compound, UL flammability classification rating 94V-0 Part no. with suffix "H" means AEC-Q101 qualified Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test VRRM 50 100 200 400 600 800 1000 V VRMS 35 70 140 280 420 560 700 V VDC 50 100 200 400 600 800 1000 V IF(AV) A I 2t A 2s RθJC °C/W TJ °C TSTG °C Version: K1604 Operating junction temperature range - 55 to +150 Storage temperature range - 55 to +150 Note 1: Pulse test with PW=300μs, 1% duty cycle IR 10 500 μA Typical thermal resistance 1.4 Rating for fusing (t<8.3ms) 166 Maximum instantaneous forward voltage (Note 1) @ 4 A @ 8 A VF 1.0 1.1 Maximum reverse current @ rated VR TJ=25°C TJ=125°C Maximum DC blocking voltage V Maximum average forward rectified current 8 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 200 A TS8P 05G TS8P 06G TS8P 07G UNIT Maximum repetitive peak reverse voltage Maximum RMS voltage PARAMETER SYMBOL TS8P 01G TS8P 02G TS8P 03G TS8P 04G MECHANICAL DATA Case: TS-6P Polarity: Polarity as marked on the body Mounting torque: 8.17 in-lbs maximum Weight: 7.15 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T A=25°C unless otherwise noted) Taiwan Semiconductor 8A, 50V - 1000V Glass Passivated Bridge Rectifiers FEATURES - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC TS-6P + ~ ~ – |
Podobny numer części - TS8P04G |
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Podobny opis - TS8P04G |
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